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1.发明公开Method for cleaning deposition chambers for high dielectric constant materials 审中-公开一种用于清洁室的高介电常数材料蒸镀法
公开(公告)号：EP1536035A2
公开(公告)日：2005-06-01
申请号：EP04027432.6
申请日：2004-11-18
CPC分类号： C23C16/4405
摘要： A method for dry etching and chamber cleaning high dielectric constant materials is disclosed herein. In one aspect of the present invention, there is provided a process for cleaning a substance comprising a dielectric constant greater than the dielectric constant of silicon dioxide from at least a portion of a surface of a reactor comprising: introducing a first gas mixture comprising a boron-containing reactive agent into the reactor wherein the first gas mixture reacts with the substance contained therein to provide a volatile product and a boron-containing by-product; introducing a second gas mixture comprising a fluorine-containing reactive agent into the reactor wherein the second gas mixture reacts with the boron-containing by-product contained therein to form the volatile product; and removing the volatile product from the reactor.
摘要翻译： 一种用于干式蚀刻和清洗室的高介电常数材料的方法是在光盘游离缺失。 在本发明的一个方面，提供了一种处理用于清洁的物质包括电介质常数比二氧化硅的从反应器包括一个表面的至少一部分上的介电常数更大的：将第一气体混合物包括硼酸 含反应剂到反应器中worin第一气体混合物与其中所含提供一种挥发性产物和含硼的物质反应的副产物; 引入第二气体混合物，其包含含氟反应剂到反应器中worin所述第二气体混合物与反应的副产物其中所含以形成挥发性产物含硼; 并除去来自反应器的挥发性产物。
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2.发明公开Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials 审中-公开Verfahren zur Reiningung eines Abscheidungskammer von Werkstoffen mit hoherDielektrizitätskonstante
公开(公告)号：EP1538235A1
公开(公告)日：2005-06-08
申请号：EP04027638.8
申请日：2004-11-22
发明人： Ji, Bing , Motika, Stephen Andrew , Pearlstein, Ronald Martin , Karwacki, Eugene Joseph Jr. , Wu, Dingjun
IPC分类号： C23C16/44
CPC分类号： C23C16/4405 , B08B7/00 , B08B7/0035
摘要： A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.
摘要翻译： 本文公开了用于从用于蚀刻和/或清洁应用的基底中去除物质的方法。 在一个实施方案中，提供了一种通过使该物质与包含至少一种成员的物质与含有卤素的化合物，硼的物质反应从物质中除去具有大于二氧化硅的介电常数的物质的方法 含氢化合物，含氮化合物，螯合化合物，含碳化合物，氯硅烷，氢氯代硅烷或有机氯硅烷，以形成挥发性产物，并从基材除去挥发性产物，从而除去 来自底物的物质。
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3.发明公开Unsaturated oxygenated fluorocarbons for selective anisotropic etch applications 审中-公开不饱和碳氟化合物的含氧用于选择性的各向异性蚀刻
公开(公告)号：EP1498941A3
公开(公告)日：2005-05-04
申请号：EP04016213.3
申请日：2004-07-09
发明人： Ji, Bing , Pearlstein, Ronald Martin , Syvret, Robert George , Badowski, Peter R. , Motika, Stephen Andrew , Karwacki, Eugene Joseph Jr. , Berger, Kerry Renard
IPC分类号： H01L21/311
CPC分类号： H01L21/31116
摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising an unsaturated oxygenated fluorocarbon. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to at least partially react with and remove at least a portion of the dielectric material. In another embodiment of the present invention, there is provided a method for making an unsaturated oxygenated fluorocarbon.
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4.发明公开Addition of D2 to H2 to detect and calibrate atomic hydrogen formed by dissociative electron attachment 审中-公开D2的除了H2与用于检测和原子氢的校准通过离解性电子附着
公开(公告)号：EP1795291A1
公开(公告)日：2007-06-13
申请号：EP06256208.7
申请日：2006-12-06
IPC分类号： B23K1/20
CPC分类号： B23K1/206 , H01L2924/0002 , H05K3/3489 , H01L2924/00
摘要： A method of detecting and calibrating dry fluxing metal surfaces of one or more components to be soldered by electron attachment using a gas mixture of reducing gas comprising hydrogen and deuterium.
摘要翻译： 检测并校正一个或多个部件的干式助熔金属表面的方法，通过使用还原气体包含氢和氘组成的混合气体电子附着焊接。
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5.发明公开Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials 审中-公开具有高介电常数的蚀刻材料和方法的用于清洁的材料的沉积室具有高介电常数的方法
公开(公告)号：EP1382716A3
公开(公告)日：2004-07-07
申请号：EP03015605.3
申请日：2003-07-15
发明人： Ji, Bing , Motika, Stephen Andrew , Pearlstein, Ronald Martin , Karwacki, Eugene Joseph Jr. , Wu, Dingjun
CPC分类号： C23C16/4405 , B08B7/00 , B08B7/0035
摘要： A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.
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6.发明公开Glass coating reactor cleaning with a reactive gas 审中-公开Reinigungsverfahren vom ReaktorfürGlassbeschichtung mit Reaktivem gas
公开(公告)号：EP1394287A2
公开(公告)日：2004-03-03
申请号：EP03015606.1
申请日：2003-07-15
发明人： Henderson, Philip Bruce , Moniz, Mario Joseph , Johnson, Andrew David , Karwacki, Eugene Joseph Jr. , Bodette, Richard R. , Cording, Christopher Robert , Johnson, Herbert David
IPC分类号： C23C16/44
CPC分类号： C23C16/4405 , Y10S438/905
摘要： A process for cleaning a glass-coating reactor includes: (a) providing the reactor to be cleaned, wherein the reactor contains a glass substrate within a chamber and the chamber has an internal surface coated with at least one substance selected from the group consisting of Si 3 N 4 or SiO 2 ; (b) terminating a flow of a deposition gas to the reactor; (c) adding to the reactor at least one cleaning gas to react with the at least one substance to form at least one volatile product; and (d) removing from -the reactor the at least one volatile product.
摘要翻译： 用于清洁玻璃包衣反应器的方法包括：（a）提供要清洁的反应器，其中反应器在室内包含玻璃基底，并且所述室具有涂覆有至少一种选自以下的物质的内表面： Si3N4或SiO2; （b）终止沉积气体流向反应器; （c）向所述反应器中加入至少一种清洁气体以与所述至少一种物质反应以形成至少一种挥发性产物; 和（d）从反应器中除去至少一种挥发性产物。
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公开(公告)号：EP1389746A2
公开(公告)日：2004-02-18
申请号：EP03017570.7
申请日：2003-08-07
CPC分类号： G03F7/322 , G03F7/0048 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/3021 , G03F7/32 , G03F7/38 , G03F7/40 , G03F7/425 , Y10S134/902
摘要： Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.
摘要翻译： 使用包含一种或多种表面活性剂的工艺溶液来减少半导体器件制造中的缺陷数量。 在某些优选实施方案中，当在图案化光致抗蚀剂层的显影期间或之后，当用作冲洗溶液时，本发明的工艺溶液可以减少显影后缺陷，例如图案塌陷。 还公开了一种减少使用本发明的工艺溶液的多个光致抗蚀剂涂覆的基材上的图案塌陷缺陷的数量的方法。
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8.发明公开Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials 审中-公开具有高介电常数的蚀刻材料和方法的用于清洁的材料的沉积室具有高介电常数的方法
公开(公告)号：EP1382716A2
公开(公告)日：2004-01-21
申请号：EP03015605.3
申请日：2003-07-15
发明人： Ji, Bing , Motika, Stephen Andrew , Pearlstein, Ronald Martin , Karwacki, Eugene Joseph Jr. , Wu, Dingjun
CPC分类号： C23C16/4405 , B08B7/00 , B08B7/0035
摘要： A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.
摘要翻译： 一种用于从用于蚀刻和/或清洁应用一个基板除去的物质的过程中盘游离缺失。 在一个，实施例提供了一种处理用于去除具有由与反应剂确实包含选自含卤素的化合物的至少一员，硼使下物质比从基板二氧化硅的介电常数更高的物质 含化合物，化合物含氢，含氮化合物，螯合化合物，含碳化合物，氯硅烷，一hydrochlorosilane，或在有机氯硅烷以形成挥发性产物，并从衬底去除挥发性产物，由此除去 从基板上的物质。
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公开(公告)号：EP1389745B1
公开(公告)日：2015-01-28
申请号：EP03017569.9
申请日：2003-08-07
IPC分类号： G03F7/16
CPC分类号： B01F17/0028 , B01F17/0021 , G03F7/0048 , G03F7/16 , G03F7/38
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10.发明公开
公开(公告)号：EP1464726A3
公开(公告)日：2006-02-01
申请号：EP04007571.5
申请日：2004-03-29
发明人： Vrtis, Raymond Nicholas , Lukas, Aaron Scott , O'Neill, Mark Leonard , Vincent, Jean Louise , Bitner, Mark Daniel , Karwacki, Eugene Joseph Jr. , Peterson, Brian Keith
IPC分类号： C23C16/40 , C23C16/56 , H01L21/312 , H01L21/316
CPC分类号： H01L21/02118 , C23C16/30 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02318 , H01L21/3122 , H01L21/31633 , H01L21/31695
摘要： Organosilica glass and organic polymeric films useful for electronic devices and methods for making same are disclosed herein. In one embodiment of the present invention, there is provided a method for enhancing the chemical vapor deposition of a film comprising an organic species comprising: providing a substrate within a reaction chamber; introducing into the chamber gaseous chemical reagents comprising an organic precursor having carbon and hydrogen bonds contained therein and a rate enhancer wherein the rate enhancer is at least one member selected from the group consisting of an oxygen-containing compound; a peroxide compound having the formula R 1 OOR 2 ; a peracid compound having the formula R 3 C(O)OC(O)R 4 ; a fluorine-containing compound; and a heavy inert gas; and applying energy to the chemical reagents in the reaction chamber sufficient to induce the reaction of the reagents and deposit the film upon at least a portion of the substrate.
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