发明授权
- 专利标题： DISPOSITIF DE COUPE DE COUCHE D'UN SUBSTRAT, ET PROCEDE ASSOCIE
- 专利标题（英）： Substrate- layer cutting device and method associated therewith
- 专利标题（中）： 基材层切割装置和方法关联公司中，
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申请号： EP02732797.2申请日： 2002-04-10
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公开(公告)号： EP1385683B8公开(公告)日： 2006-12-20
- 发明人: MARTINEZ, Muriel , BARGE, Thierry , SOUBIE, Alain , LAGAHE - Blanchard , Chrystelle , RAYSSAC, Olivier , Berne, Cécile
- 申请人： S.O.I.Tec Silicon on Insulator Technologies
- 申请人地址： Parc Technologique des Fontaines, Chemin des Franques 38190 Bernin FR
- 专利权人： S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人： S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人地址： Parc Technologique des Fontaines, Chemin des Franques 38190 Bernin FR
- 代理机构： Le Forestier, Eric
- 优先权： FR0104937 20010410; FR0113951 20011029
- 国际公布： WO2002083387 20021024
- 主分类号： B28D5/00
- IPC分类号： B28D5/00 ; H01L21/00 ; B32B35/00
摘要：
The invention relates to a device (40) for automatic high-precision cutting of a layer of material joined to a substrate source by means of an embrittled area, said source substrate and layer forming a set which is to be cut and said device comprising cutting means (531, 532) in addition to means (510) for maintaining the position of the set which is to be cut, characterized in that the cutting means comprise a blade which acts upon the set which is to be cut. The invention also relates to a method for using said device.
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