发明公开
EP1388895A2 System and method to reduce noise in a substrate
有权
System and Methode zur Verminderung vonStörsignalenin einem Substrat
- 专利标题： System and method to reduce noise in a substrate
- 专利标题（中）： System and Methode zur Verminderung vonStörsignalenin einem Substrat
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申请号： EP03018063.2申请日： 2003-08-07
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公开(公告)号： EP1388895A2公开(公告)日： 2004-02-11
- 发明人: Fujimori, Ichiro
- 申请人： Broadcom Corporation
- 申请人地址： 16215 Alton Parkway Irvine, California 92618-7013 US
- 专利权人： Broadcom Corporation
- 当前专利权人： Broadcom Corporation
- 当前专利权人地址： 16215 Alton Parkway Irvine, California 92618-7013 US
- 代理机构： Jehle, Volker Armin, Dipl.-Ing.
- 优先权： US402095P 20020807; US294880 20021114
- 主分类号： H01L27/02
- IPC分类号： H01L27/02
摘要：
A system and method for reducing noise in a substrate of a chip is provided. The system may include a substrate (70) doped with a first dopant. A first well (80) may be disposed on the substrate and doped with a second dopant. A second well (120) may be disposed within the first well (80) and doped with the second kind of dopant. A first transistor (100) may include one or more first transistor components disposed in the second well (120). The first transistor (100) may be adapted to employ a first type of channel having a quiet voltage source (140) connected to a body thereof. A third well (110) may be disposed within the first well (80) and doped with the first kind of dopant. A second transistor (90) may include one or more second transistor components that may be disposed in the third well (110). The second transistor (90)may be adapted to employ a second type of channel. The first well (80) may shield the substrate (70) from noise in the second well (120) and third well (110).
公开/授权文献
- EP1388895B1 System and method to reduce noise in a substrate 公开/授权日：2011-06-29
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