发明公开
- 专利标题： Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof
- 专利标题（中）： 与柔性衬底上的保护层的薄膜晶体管，与用于电子设备和方法用于制备
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申请号： EP03258178.7申请日： 2003-12-24
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公开(公告)号： EP1435661A2公开(公告)日： 2004-07-07
- 发明人: Kim, Do-young, 842-1104 Byeokjeokgol 8-danjii , Park, Wan-jun , Park, Young-soo, 204-502 Dongsuwon LG Village , Lee, June-key, 241-504 Hwanggol Maeul , Min, Yo-sep, 711-401 Salgugol , Kwon, Jang-yeon , Seo, Sun-ae, 932-301 (Family Life-dong) , Choi, Young-min , Chae, Soo-doo, 326-301 Sibeom-danji Hanyang Apt.
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： 416 Maetan-dong, Yeongtong-gu Suwon-si, Gyeonggi-do KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： 416 Maetan-dong, Yeongtong-gu Suwon-si, Gyeonggi-do KR
- 代理机构： Greene, Simon Kenneth
- 优先权： KR2002087940 20021231
- 主分类号： H01L27/00
- IPC分类号： H01L27/00 ; G02F1/1333
摘要：
Provided are a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof. The thin film semiconductor device includes a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. The electronic device includes a flexible substrate and a semiconductor chip formed on the flexible substrate and further includes a protective cap that seals the semiconductor chip. The durability of the thin film semiconductor device against the stress due to the bending of the substrate is improved by using the protective cap.
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