发明公开
EP1460681A2 Silicon carbide semiconductor device and method for fabricating the same
有权
Siliziumkarbidhalbleiterbauelement和Verfahren zu dessen Herstellung
- 专利标题： Silicon carbide semiconductor device and method for fabricating the same
- 专利标题（中）： Siliziumkarbidhalbleiterbauelement和Verfahren zu dessen Herstellung
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申请号： EP04006581.5申请日： 2004-03-18
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公开(公告)号： EP1460681A2公开(公告)日： 2004-09-22
- 发明人: Kusumoto, Osamu , Kitabatake, Makoto , Takahashi, Kunimasa , Yamashita, Kenya , Miyanaga, Ryoko , Uchida, Masao
- 申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 申请人地址： 1006, Oaza-Kadoma Kadoma-shi, Osaka 571-8501 JP
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址： 1006, Oaza-Kadoma Kadoma-shi, Osaka 571-8501 JP
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
- 优先权： JP2003073835 20030318
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/24 ; H01L29/45 ; H01L23/485
摘要：
An inventive semiconductor device is provided with: a silicon carbide substrate 1 ; an n-type high resistance layer 2 ; well regions 3 provided in a surface region of the high resistance layer 2 ; a p + contact region 4 provided within each well region 3 ; a source region 5 provided to laterally surround the p + contact region 4 within each well region 3 ; first source electrodes 8 provided on the source regions 5 and made of nickel; second source electrodes 9 that cover the first source electrodes 8 and that are made of aluminum; a gate insulating film 6 provided on a portion of the high resistance layer 2 sandwiched between the two well regions 3 ; a gate electrode 10 made of aluminum; and an interlayer dielectric film 11 that covers the second source electrodes 9 and the gate electrode 10 and that is made of silicon oxide.
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