发明公开
- 专利标题： MULTIBEAM SEMICONDUCTOR LASER, SEMICONDUCTOR LIGHT- EMITTING DEVICE AND SEMICONDUCTOR DEVICE
- 专利标题（中）： 美洲黑社会化委员会，哈勃解放阵线
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申请号： EP03736075申请日： 2003-06-06
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公开(公告)号： EP1513234A4公开(公告)日： 2005-10-19
- 发明人: TOJO TSUYOSHI , YABUKI Y , ANSAI S , HINO TOMONORI , GOTO OSAMU , FUJIMOTO TSUYOSHI , MATSUMOTO O , TAKEYA MOTONOBU , OOFUJI YOSHIO
- 申请人： SONY CORP
- 专利权人： SONY CORP
- 当前专利权人： SONY CORP
- 优先权： JP2002168945 2002-06-10
- 主分类号： H01S5/042
- IPC分类号： H01S5/042 ; H01S5/22 ; H01S5/323 ; H01S5/343 ; H01S5/40
摘要：
A multibeam semiconductor laser wherein a group III-V nitride compound semiconductor layer having a laser structure is formed on a major surface of a sapphire substrate or the like, and anodes and cathodes are formed on the group III-V nitride compound semiconductor layer. An anode is formed across a cathode, with an insulating film between them. Another anode is formed across another cathode, with an insulating film between them.
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