公开(公告)号：EP1513234A4

公开(公告)日：2005-10-19

申请号：EP03736075

申请日：2003-06-06

申请人： SONY CORP

发明人： TOJO TSUYOSHI ,  YABUKI Y ,  ANSAI S ,  HINO TOMONORI ,  GOTO OSAMU ,  FUJIMOTO TSUYOSHI ,  MATSUMOTO O ,  TAKEYA MOTONOBU ,  OOFUJI YOSHIO

IPC分类号： H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

CPC分类号： B82Y20/00 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/34333 ,  H01S5/4031

摘要： A multibeam semiconductor laser wherein a group III-V nitride compound semiconductor layer having a laser structure is formed on a major surface of a sapphire substrate or the like, and anodes and cathodes are formed on the group III-V nitride compound semiconductor layer. An anode is formed across a cathode, with an insulating film between them. Another anode is formed across another cathode, with an insulating film between them.

摘要翻译： 在包括层叠在蓝宝石或其他材料的基板的一个表面上的氮化物III-V化合物半导体层以形成激光结构的多光束半导体激光器中，并且包括形成在氮化物III上的多个阳极电极和多个阴极电极 -V化合物半导体层，其中一个阳极形成为通过绝缘膜桥接在一个阴极电极上，并且另一个阳极电极形成为通过绝缘膜桥接在另一个阴极电极上。

公开(公告)号：EP1691458A4

公开(公告)日：2007-09-05

申请号：EP04799951

申请日：2004-11-30

申请人： SONY CORP

发明人： TANAKA TOMIJI ,  TAKAHASHI KAZUO ,  TAKEYA MOTONOBU

IPC分类号： H01S5/14 ,  H01S5/00 ,  H01S5/022 ,  H01S5/065 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01S5/141 ,  H01S5/02212 ,  H01S5/02248 ,  H01S5/02296 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/0655 ,  H01S5/2219 ,  H01S5/32341

摘要： There is provided an external resonator type semiconductor laser having a greater output or more preferable single-mode characteristic than the conventional external resonator type semiconductor laser. The external resonator type semiconductor laser includes a laser diode (11), a window glass (16), a grating, and a lens and has some improvements. The first improvement is that the window glass (16) is inclined by a predetermined angle with respect to the light emitting surface (19) of the laser diode (11). The second improvement is that arrangement of the laser diode (11) and the like is adjusted so that the S wave is applied to the grating. The third improvement is that the laser diode (11) is configured so that generation of kink is suppressed when the output power is 45 mW or below. The other improvements are to set the reflectance of the light emitting surface of the laser diode (11), the numerical aperture of the lens, the length of the external resonator, and the primary light reflectance in the grating to optimal values, respectively.