发明公开
EP1514297A2 PROCEDE DE REALISATION PAR EPITAXIE D UN FILM DE NITRURE DE GALLIUM SEPARE DE SON SUBSTRAT
审中-公开
外延生长方法的隔离其底物GALLIUMNITRIDFILMS
- 专利标题： PROCEDE DE REALISATION PAR EPITAXIE D UN FILM DE NITRURE DE GALLIUM SEPARE DE SON SUBSTRAT
- 专利标题（英）： Method for epitaxial growth of a gallium nitride film separated from its substrate
- 专利标题（中）： 外延生长方法的隔离其底物GALLIUMNITRIDFILMS
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申请号： EP03755219.7申请日： 2003-05-28
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公开(公告)号： EP1514297A2公开(公告)日： 2005-03-16
- 发明人: Lahreche, Hacène , Nataf, Gilles,La Closerie Marina - Bât. A , Beaumont, Bernard
- 申请人： Lumilog
- 申请人地址： 2720 Chemin de Saint Bernard 06220 Vallauris FR
- 专利权人： Lumilog
- 当前专利权人： Lumilog
- 当前专利权人地址： 2720 Chemin de Saint Bernard 06220 Vallauris FR
- 代理机构： Ahner, Francis
- 优先权： FR0206486 20020528
- 国际公布： WO2003100839 20031204
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/762
摘要：
The invention concerns the preparation of gallium nitride films by epitaxy with reduced defect density levels. It concerns a method for producing a gallium nitride (GaN) film by epitaxial deposition of GaN. The invention is characterized in that it comprises at least a step of epitaxial lateral overgrowth and in that it comprises a step which consists in separating part of the GaN layer from its substrate by embrittlement through direct ion implantation in the GaN substrate. The invention also concerns the films obtainable by said method as well as the optoelectronic and electronic components provided with said gallium nitride films.
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