公开(公告)号：EP1625612A2

公开(公告)日：2006-02-15

申请号：EP04733606.0

申请日：2004-05-18

申请人： Lumilog

发明人： BEAUMONT, Bernard ,  FAURIE, Jean-Pierre ,  GIBART, Pierre

IPC分类号： H01L21/20

CPC分类号： H01L21/02505 ,  C30B25/02 ,  C30B25/04 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/12

摘要： Gallium nitride substrates are grown by epitaxial lateral overgrowth using multiple steps. On a masked substrate having openings areas, selective growth produces first triangular stripes in which most of the threading dislocations are bent at 90°. In a second step, growth conditions are changed to increase the lateral growth rate and produce a flat (0001) surface. At this stage the density of dislocations on the surface is

公开(公告)号：EP1034325B9

公开(公告)日：2006-01-04

申请号：EP98950142.4

申请日：1998-10-15

申请人： Lumilog

发明人： BEAUMONT, Bernard ,  GIBART, Pierre ,  GUILLAUME, Jean-Claude ,  NATAF, Gilles ,  VAILLE, Michel ,  HAFFOUZ, Soufien

IPC分类号： C30B25/02 ,  H01L33/00 ,  C30B29/40

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/32341

摘要： The invention concerns a method for producing a gallium nitride (GaN) epitaxial layer characterised in that it consists in depositing on a substrate a dielectric layer acting as a mask and depositing on the masked gallium nitride, by epitaxial deposit, so as to induce the deposit of gallium nitride patterns and the anisotropic lateral growth of said patterns, the lateral growth being pursued until the different patterns coalesce. The deposit of the gallium nitride patterns can be carried out ex-situ by dielectric etching or in-situ by treating the substrate for coating it with a dielectric film whereof the thickness is of the order of one angstrom. The invention also concerns the gallium nitride layers obtained by said method.

公开(公告)号：EP2122015A1

公开(公告)日：2009-11-25

申请号：EP06819930.6

申请日：2006-12-08

申请人： Lumilog

发明人： AUJOL, Eric ,  FAURIE, Jean-Pierre ,  BEAUMONT, Bernard

IPC分类号： C30B25/04 ,  C30B29/40

CPC分类号： C30B25/04 ,  C30B25/18 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/10

摘要： The present invention concerns a method for manufacturing a single crystal of nitride by epitaxial growth on a substrate appropriate for the growth of the said crystal, wherein the substrate comprises, deposited on the edges of its growth surface, a mask appropriate to prevent growing of the said single crystal on the edges of the substrate.

公开(公告)号：EP1338683A2

公开(公告)日：2003-08-27

申请号：EP03005910.9

申请日：1998-10-15

申请人： Lumilog

发明人： Haffouz, Soufien ,  Gibart, Pierre ,  Guillaume, Bernard ,  Nataf, Gilles ,  Vaille, Michel ,  Beaumont, Bernard

IPC分类号： C30B25/02 ,  H01L33/00 ,  C30B29/40

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/32341

摘要： La présente invention concerne un procédé de réalisation d'une couche épitaxiale de nitrure de gallium (GaN) caractérisé en ce qu'il comprend le dépôt sur un substrat d'une couche de diélectrique fonctionnant comme un masque et la reprise du substrat masqué par du nitrure de gallium, dans des conditions de dépôt par épitaxie, de façon à induire le dépôt de motifs de nitrure de gallium et la croissance anisotrope et latérale desdits motifs, la croissance latérale étant poursuivie jusqu'à la coalescence des différents motifs.
Le procédé de dépôt de motifs de nitrure de gallium peut être effectué ex-situ par gravure de diélectrique ou in-situ par traitement du substrat consistant à recouvrir celui-ci par un film diélectrique dont l'épaisseur est de l'ordre de l'angström.
L'invention concerne également les couches de nitrure de gallium susceptibles d'être obtenues par le procédé.

摘要翻译： 通过在衬底（1）上沉积介电掩模层（3）形成外延氮化镓层，然后通过各向异性和横向生长再次进行GaN外延以引起GaN区域的沉积和随后的这些区域（6）的聚结。 还包括独立权利要求：（i）通过上述方法形成的外延氮化镓层; 和（ii）设置有上述外延氮化镓层的光电子部件，特别是激光二极管。 优选特征：衬底（1）由蓝宝石，ZnO，6H-SiC或LiAlO 2组成。 电介质层（3）由SixNy组成。

公开(公告)号：EP3174677A1

公开(公告)日：2017-06-07

申请号：EP15750002.6

申请日：2015-07-27

申请人： Saint-Gobain Lumilog

发明人： BEAUMONT, Bernard ,  FAURIE, Jean-Pierre

IPC分类号： B28D5/02 ,  H01L21/02

CPC分类号： H01L21/0254 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02639 ,  H01L33/0075 ,  H01L33/32

摘要： The invention relates to a process for fabricating a semiconductor including a layer (50) of element-13 nitride comprising active zones (52) for the fabrication of electronic components, and inactive zones (51), the active and inactive zones extending over a front side (53) of the element-13 nitride layer, the concentration of crystal defects in the active zones being lower than the concentration of defects in the inactive zones, the process comprising steps consisting in: using a mask to form, in a starting substrate (10): o first regions for growing the active zones and o second regions (11) for growing the inactive zones, the mask comprising a plurality of apertures each defining an active zone feature on the starting substrate; and growing (700) the element-13 nitride layer comprising the active and inactive zones on the first and second regions, the process being noteworthy in that it furthermore comprises the following steps: receiving a theoretical feature pitch, the theoretical feature pitch corresponding to a desired distance between two adjacent active-zone features on the front side of the element-13 nitride layer; and calculating at least one mask pitch different from the theoretical feature pitch in order to compensate for active-zone feature shifts, the active-zone feature shifts being due to the conditions of growth of the semiconductor, the mask pitch corresponding to a distance between two adjacent apertures in the protective mask.

摘要翻译： 本发明涉及一种用于制造半导体，包括元件-13族氮化物构成的层（50），包括用于电子元件的制造有源区（52），和非活性区（51），活动和非活动区之上延伸的前 在元件13的氮化物层，晶体缺陷在活性区比的缺陷在无效区域中的浓度低的浓度的侧（53），该方法包括步骤在由：利用掩模形成，在起始衬底 （10）：○用于生长有源区和邻用于生长非活性区，所述掩模包括光圈的所述起始衬底有源区特征的每个限定的多个第二区域（11）的第一区域; 和生长（700）的元件13的氮化物层包括在所述第一和第二区域中的活动和非活动区域，则过程是值得注意之处做了进一步包括以下步骤：接收一个理论特征节距，理论特征节距对应于一个 两个相邻的有源区之间所需的距离展示了在元件13的氮化物层的前侧; 并且为了补偿有源区功能偏移计算从所述理论特征节距不同的至少一个掩模间距，有源区功能偏移是由于半导体的生长条件，在掩模间距对应于两个之间的距离 相邻的光圈在防护罩。

公开(公告)号：EP1977028A1

公开(公告)日：2008-10-08

申请号：EP06830658.8

申请日：2006-12-15

申请人： Lumilog

发明人： BEAUMONT, Bernard ,  FAURIE, Jean-Pierre ,  GIBART, Pierre

IPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/20

CPC分类号： C30B29/40 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： High quality free standing GaN is obtained using a new modification of the Epitaxial Lateral Overgrowth technology in which 3D islands or features are created only by tuning the growth parameters. Smoothing these islands (2D growth) is achieved thereafter by setting growth conditions producing enhanced lateral growth. The repetition of 3D-2D growth results in multiple bending of the threading dislocations thus producing thick layers or free standing GaN with threading dislocation density below 106cm-2.

公开(公告)号：EP1034325B1

公开(公告)日：2005-08-31

申请号：EP98950142.4

申请日：1998-10-15

申请人： Lumilog

发明人： BEAUMONT, Bernard ,  GIBART, Pierre ,  GUILLAUME, Jean-Claude ,  NATAF, Gilles ,  VAILLE, Michel ,  HAFFOUZ, Soufien

IPC分类号： C30B25/02 ,  H01L33/00 ,  C30B29/40

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/32341

摘要： The invention concerns a method for producing a gallium nitride (GaN) epitaxial layer characterised in that it consists in depositing on a substrate a dielectric layer acting as a mask and depositing on the masked gallium nitride, by epitaxial deposit, so as to induce the deposit of gallium nitride patterns and the anisotropic lateral growth of said patterns, the lateral growth being pursued until the different patterns coalesce. The deposit of the gallium nitride patterns can be carried out ex-situ by dielectric etching or in-situ by treating the substrate for coating it with a dielectric film whereof the thickness is of the order of one angstrom. The invention also concerns the gallium nitride layers obtained by said method.

公开(公告)号：EP1525340A2

公开(公告)日：2005-04-27

申请号：EP03750838.9

申请日：2003-07-24

申请人： Lumilog

发明人： BEAUMONT, Bernard ,  GIBART, Pierre ,  FAURIE, Jean-Pierre

IPC分类号： C30B25/02

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02642 ,  H01L33/007

摘要： The invention concerns a method for preparing gallium nitride films by vapour-phase epitaxy with low defect densities. The invention concerns a method for producing a gallium nitride (GaN) film from a substrate by vapour-phase epitaxy deposition of gallium nitride. The invention is characterized in that the gallium nitride deposition comprises at least one step of vapour-phase epitaxial lateral overgrowth, in that at least one of said epitaxial lateral overgrowth steps is preceded by etching openings either in a dielectric mask previously deposited, or directly into the substrate, and in that it consists in introducing a dissymmetry in the environment of dislocations during one of the epitaxial lateral overgrowth steps so as to produce a maximum number of curves in the dislocations, the curved dislocations not emerging at the surface of the resulting gallium nitride layer. The invention also concerns the optoelectronic and electronic components produced from said gallium nitride films..

公开(公告)号：EP3423614A1

公开(公告)日：2019-01-09

申请号：EP17707352.5

申请日：2017-03-02

申请人： Saint-Gobain Lumilog

发明人： BEAUMONT, Bernard ,  FAURIE, Jean-Pierre

IPC分类号： C30B29/40 ,  H01L21/20

公开(公告)号：EP3231006A1

公开(公告)日：2017-10-18

申请号：EP15821112.8

申请日：2015-12-11

申请人： Saint-Gobain Lumilog

发明人： BEAUMONT, Bernard ,  LE ROUX, Vianney ,  COLE, Jason

IPC分类号： H01L21/02 ,  C30B25/18 ,  C30B29/40

CPC分类号： C30B29/406 ,  C30B25/04 ,  C30B25/18 ,  C30B29/403 ,  C30B33/00 ,  H01L21/02002 ,  H01L33/32

摘要： The invention relates to a method for production of wafers of nitrides of element (13) (5a, 5b, 5c, 5d) from a self-supported crystal of nitride of element (13), extending longitudinally along a main axis orthogonal to a growth face of the crystal and passing through the centre of said growth face, the crystal (10) having a truncation angle with a non-zero value, remarkable in that the method comprises a phase of cutting the self-supported crystal along the transverse cutting planes of the crystal in order to obtain wafers of nitride of element (13), each wafer including a front face having a non-zero truncation angle in the vicinity of the centre of the front face.

摘要翻译： 本发明涉及一种由元素（13）的自支撑氮化物晶体生产元素（13）（5a，5b，5c，5d）的氮化物晶片的方法，该元素沿着垂直于生长的主轴纵向延伸 并且通过所述生长面的中心，所述晶体（10）具有非零值的截断角，其显着之处在于所述方法包括沿着所述横向切割平面切割所述自支撑晶体的阶段 以获得元件（13）的氮化物晶片，每个晶片包括在前表面的中心附近具有非零截断角的前表面。