发明公开
EP1619798A1 Semiconductor integrated circuit, logic operation circuit, and flip flop
审中-公开
Integrierte Halbleiterschaltung，logische Schaltung und Kippschaltung
- 专利标题： Semiconductor integrated circuit, logic operation circuit, and flip flop
- 专利标题（中）： Integrierte Halbleiterschaltung，logische Schaltung und Kippschaltung
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申请号： EP05018764.0申请日： 2001-06-20
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公开(公告)号： EP1619798A1公开(公告)日： 2006-01-25
- 发明人: Zama, Hedemasa , Koizumi, Masayuki, 204,Namamugi-Yuri-Heights , Ito, Yukiko , Usami, Kimiyoshi , Kawabe, Naoyuki, 302,Toshiba-Nakanocho-Apart. , Kanazawa, Masahiro , Furusawa, Toshiyuki
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210-8572 JP
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210-8572 JP
- 代理机构： HOFFMANN EITLE
- 优先权： JP2000184398 20000620
- 主分类号： H03K19/00
- IPC分类号： H03K19/00 ; H03K19/094 ; H01L21/822
摘要：
There is provided a semiconductor integrated circuit, a logic operation circuit and a flip flop capable of operating at a high speed and having a leak electric current reduced.
In a semiconductor integrated circuit according to the present invention, only a gate circuit on a critical path is constituted by an MT gate cell obtained by combining transistors having a low threshold voltage with transistors having a high threshold voltage, and any other gate circuit is constituted by a transistor having a high threshold voltage. Consequently, the gate circuit on the critical path can be operated at a high speed, and the overall leak electric current can be suppressed, thereby reducing the consumption power.
In a semiconductor integrated circuit according to the present invention, only a gate circuit on a critical path is constituted by an MT gate cell obtained by combining transistors having a low threshold voltage with transistors having a high threshold voltage, and any other gate circuit is constituted by a transistor having a high threshold voltage. Consequently, the gate circuit on the critical path can be operated at a high speed, and the overall leak electric current can be suppressed, thereby reducing the consumption power.
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