发明公开
- 专利标题： INTEGRIERTE SCHALTUNG MIT EINEM ORGANISCHEN HALBLEITER UND VERFAHREN ZUR HERSTELLUNG EINER INTEGRIERTEN SCHALTUNG
- 专利标题（英）： Integrated circuit comprising an organic semiconductor, and method for the production of an integrated circuit
- 专利标题（中）： 集成电路与有机半导体与方法制造集成电路
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申请号： EP04786185.1申请日： 2004-08-24
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公开(公告)号： EP1658647A2公开(公告)日： 2006-05-24
- 发明人: HALIK, Marcus , KLAUK, Hagen , SCHMID, Günter , WALTER, Andreas , ZSCHIESCHANG, Ute
- 申请人： Infineon Technologies AG
- 申请人地址： St.-Martin-Strasse 53 81669 München DE
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： St.-Martin-Strasse 53 81669 München DE
- 代理机构： Gross, Felix
- 优先权： DE10340608 20030829
- 国际公布： WO2005023940 20050317
- 主分类号： H01L51/10
- IPC分类号： H01L51/10 ; H01B3/18
摘要：
The invention relates to an integrated circuit comprising an organic semiconductor, especially an organic field effect transistor (OEFT) that is provided with a dielectric layer. Said integrated circuit is produced by means of a polymer formulation consisting of a) 100 parts of at least one crosslinkable basic polymer, b) 10 to 20 parts of at least one dibenzyl or tribenzyl alcohol compound as an electrophilic crosslinking component, c) 0.2 to 10 parts of at least one photo acid generator dissolved in d) at least one solvent. The invention further relates to a method for producing an integrated circuit, which makes it possible to produce integrated circuits comprising dielectric layers, particularly for OFETs, at low temperatures.
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