INTEGRIERTE SCHALTUNG UND VERFAHREN ZUR HERSTELLUNG EINER INTEGRIERTEN SCHALTUNG
    9.
    发明公开
    INTEGRIERTE SCHALTUNG UND VERFAHREN ZUR HERSTELLUNG EINER INTEGRIERTEN SCHALTUNG 审中-公开
    集成的电路和方法制造集成电路

    公开(公告)号:EP1658624A2

    公开(公告)日:2006-05-24

    申请号:EP04786186.9

    申请日:2004-08-24

    IPC分类号: H01B3/44 H01L51/30

    CPC分类号: C08K5/053 C08K5/42 C08L61/14

    摘要: The invention relates to an integrated circuit comprising an organic semiconductor, particularly an organic field effect transistor (OEFT) that is provided with a dielectric layer. Said integrated circuit is produced by means of a polymer formulation consisting of a) 100 parts of at least one crosslinkable basic polymer, b) 10 to 20 parts of at least one electrophilic crosslinking component, c) 1 to 10 parts of at least one thermal acid catalyst that generates an activating proton at temperatures ranging from 100 to 150 °C, dissolved in d) at least one solvent. The invention further relates to a method for producing an integrated circuit, which makes it possible to produce integrated circuits comprising dielectric layers, especially for OFETs, at low temperatures.