公开(公告)号：EP1546217A1

公开(公告)日：2005-06-29

申请号：EP03753288.4

申请日：2003-09-09

申请人： Infineon Technologies AG

发明人： SCHMID, Günter ,  KLAUK, Hagen ,  HALIK, Marcus ,  ENGL, Reimund ,  WALTER, Andreas

IPC分类号： C08F8/02 ,  H01L51/30

CPC分类号： C08F8/02 ,  H01L27/28 ,  H01L51/004

摘要： The invention relates to polymers displaying a resistive hysteresis effect. The polymers comprise a polymer backbone onto which lateral pentaarylcyclopentadienyl groups are bonded. A resistive memory element may be produced by means of the polymer, which contains the polymer as storage medium. By application of a voltage, the memory element may be switched from a non-conducting to a conducting state.

公开(公告)号：EP1532851A1

公开(公告)日：2005-05-25

申请号：EP03790746.6

申请日：2003-08-25

申请人： Infineon Technologies AG

发明人： ZSCHIESCHANG, Ute ,  HALIK, Marcus ,  KLAUK, Hagen ,  SCHMID, Günter

IPC分类号： H05K3/12 ,  H05K1/09 ,  H01L51/20 ,  H01L51/40

CPC分类号： H05K3/207 ,  H01L51/0021 ,  H01L51/0022 ,  H01L51/0512 ,  H01L51/0541 ,  H05K3/1275 ,  H05K2201/0133 ,  H05K2201/0329 ,  H05K2203/0113

摘要： The invention relates to the production of a conductive organic track on a substrate. The inventive method consists in charging a printer buffer provided with a structured hydrophobe printing surface with a printing solution which contains a conductive organic polymer, and in forming a structured organic polymeric layer on said substrate by contacting a hydrophilic support. Said method can be continuously used by selecting appropriated geometrical characteristics for the printer buffer and substrate.

公开(公告)号：EP1232294A2

公开(公告)日：2002-08-21

申请号：EP00972586.2

申请日：2000-09-07

申请人： Infineon Technologies AG

发明人： SEZI, Recai ,  SCHMID, Günter ,  LOWACK, Klaus ,  RADLIK, Wolfgang ,  HAUSSMANN, Jörg

IPC分类号： C23C18/16

CPC分类号： H05K3/185 ,  C23C18/1605 ,  H05K2203/0525

摘要： The invention relates to a method for metallizing dielectrics during which a photosensitive dielectric is applied to a substrate. The dielectric is then exposed to light though a mask, is seeded with a metal and subjected to a temperature treatment and, afterwards, the dielectric is chemically metallized. Alternatively, the dielectric can be firstly seeded with a metal after being applied to the substrate, and then exposed to light through a mask. Afterwards, excess seeding material is removed and the dielectric is chemically metallized.

公开(公告)号：EP1189974A1

公开(公告)日：2002-03-27

申请号：EP01931357.6

申请日：2001-03-09

申请人： Infineon Technologies AG

发明人： HAUSSMANN, Joerg ,  MAIER, Gerhard ,  SCHMID, Günter ,  SEZI, Recai

IPC分类号： C08G73/22 ,  G03F7/038

CPC分类号： G03F7/0233 ,  C08G73/22 ,  Y10S430/107

摘要： The invention relates to polybenzoxazole precursors which are provided with one of the following partial structures: (I) or (II), wherein A1 to A7 are, independently from one another, H, F, CH¿3?, CF3, OCH3 or OCF3 and T is an aromatic or heterocyclic radical.

公开(公告)号：EP1658646A2

公开(公告)日：2006-05-24

申请号：EP04786208.1

申请日：2004-08-27

申请人： Infineon Technologies AG

发明人： HALIK, Marcus ,  KLAUK, Hagen ,  SCHMID, Günter ,  ZSCHIESCHANG, Ute

IPC分类号： H01L51/00

CPC分类号： H01L51/0591 ,  B82Y10/00 ,  G11C13/0014 ,  H01L27/28 ,  H01L51/0012 ,  H01L51/0094 ,  H01L51/0595

摘要： The invention relates to a compound comprising at least one memory unit consisting of an organic memory material, especially for using in CMOS structures, said compound being characterised by a) at least one first anchor group (1) provided with a reactive group for covalently bonding to a first electrode (10), especially a bottom electrode of a memory cell (102), and b) at least one second anchor group (2) provided with a reactive group for bonding to a second electrode (20), especially a top electrode of a memory cell (102). The invention also relates to a semiconductor component, and to a method for producing a semiconductor component. The invention thus provides a compound, a semiconductor component, and a method for producing the semiconductor component, by which means molecular memory layers can be efficiently formed on conventional substrates.

公开(公告)号：EP1636826A2

公开(公告)日：2006-03-22

申请号：EP04738767.5

申请日：2004-06-18

申请人： Infineon Technologies AG

发明人： SCHMID, Günter ,  HALIK, Marcus ,  KLAUK, Hagen ,  ZSCHIESCHANG, Ute ,  EFFENBERGER, Franz ,  SCHÜTZ, Markus ,  MAISCH, Steffen ,  SEIFRITZ, Steffen ,  BUCKEL, Frank

IPC分类号： H01L21/00

CPC分类号： G03F7/165 ,  B05D1/185 ,  B82Y10/00 ,  C03C17/30 ,  C03C17/38 ,  C07F7/12 ,  C07F7/1836 ,  H01L51/0075 ,  H01L51/0516 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/936

摘要： The invention relates to a compound used to form a self-assembled monolayer, especially a monolayer for a semiconductor component, said compound being characterised by a molecular group able to carry out a Π-Π interaction (3) with other similar compounds and/or other different compounds for the stabilisation of the monolayer (11). The invention also relates to a layer structure, a semiconductor component, and a method for producing a layer structure. In this way, a semiconductor component, especially an organic field-effect transistor, can be efficiently produced.

公开(公告)号：EP1525631A2

公开(公告)日：2005-04-27

申请号：EP03787668.7

申请日：2003-07-15

申请人： Infineon Technologies AG

发明人： KLAUK, Hagen ,  SCHMID, Günter ,  ZSCHIESCHANG, Ute ,  HALIK, Marcus ,  TERZOGLU, Efstratios

IPC分类号： H01L51/20 ,  H01L51/40

CPC分类号： H01L51/105 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0084 ,  H01L51/0087 ,  H01L51/0097 ,  H01L51/0545

摘要： The invention relates to a semiconductor device comprising a semiconductor section consisting of an organic semiconductor material, a first contact for injecting charge carriers into the semiconductor section and a second contact for extracting charge carriers from the semiconductor section. A phosphine layer is located between the first contact and the semiconductor section and/or between the second contact and the semiconductor section. The phosphine acts as a charge transfer molecule, which facilitates the transfer of charge carriers between the contact and the organic semiconductor material. This enables the contact resistance between the contact and the organic material to be significantly reduced.

公开(公告)号：EP1658647B1

公开(公告)日：2009-02-18

申请号：EP04786185.1

申请日：2004-08-24

申请人： Infineon Technologies AG

发明人： HALIK, Marcus ,  KLAUK, Hagen ,  SCHMID, Günter ,  WALTER, Andreas ,  ZSCHIESCHANG, Ute

IPC分类号： H01L51/10 ,  H01B3/18

CPC分类号： H01B3/442 ,  H01L51/052

摘要： The invention relates to an integrated circuit comprising an organic semiconductor, especially an organic field effect transistor (OEFT) that is provided with a dielectric layer. Said integrated circuit is produced by means of a polymer formulation consisting of a) 100 parts of at least one crosslinkable basic polymer, b) 10 to 20 parts of at least one dibenzyl or tribenzyl alcohol compound as an electrophilic crosslinking component, c) 0.2 to 10 parts of at least one photo acid generator dissolved in d) at least one solvent. The invention further relates to a method for producing an integrated circuit, which makes it possible to produce integrated circuits comprising dielectric layers, particularly for OFETs, at low temperatures.

公开(公告)号：EP1658647A2

公开(公告)日：2006-05-24

申请号：EP04786185.1

申请日：2004-08-24

申请人： Infineon Technologies AG

发明人： HALIK, Marcus ,  KLAUK, Hagen ,  SCHMID, Günter ,  WALTER, Andreas ,  ZSCHIESCHANG, Ute

IPC分类号： H01L51/10 ,  H01B3/18

CPC分类号： H01B3/442 ,  H01L51/052

摘要： The invention relates to an integrated circuit comprising an organic semiconductor, especially an organic field effect transistor (OEFT) that is provided with a dielectric layer. Said integrated circuit is produced by means of a polymer formulation consisting of a) 100 parts of at least one crosslinkable basic polymer, b) 10 to 20 parts of at least one dibenzyl or tribenzyl alcohol compound as an electrophilic crosslinking component, c) 0.2 to 10 parts of at least one photo acid generator dissolved in d) at least one solvent. The invention further relates to a method for producing an integrated circuit, which makes it possible to produce integrated circuits comprising dielectric layers, particularly for OFETs, at low temperatures.

公开(公告)号：EP1636421A2

公开(公告)日：2006-03-22

申请号：EP04738696.6

申请日：2004-06-14

申请人： Infineon Technologies AG

发明人： HALIK, Marcus ,  SCHMID, Günter ,  KLAUK, Hagen ,  EDER, Florian ,  ZSCHIESCHANG, Ute

IPC分类号： D21H17/34

CPC分类号： D21H19/24 ,  D21H19/72 ,  H01L51/0002 ,  H01L51/0545 ,  Y10T428/31993

摘要： The invention relates to a solution for treating a rough surface, especially a paper, which is used as a supporting material for a semiconductor component. Said solution is characterized by at least one phenol-containing basic polymer and/or copolymer. The invention also relates to a method for treating said surface with a solution, and a semiconductor component that is provided with a substrate which has been treated with a solution according to the inventive method. The invention makes it possible to arrange semiconductor components on rough surfaces.