发明授权
EP1665284B1 NON-VOLATILE MEMORY AND METHOD WITH BIT LINE COMPENSATION DEPENDENT ON NEIGHBORING OPERATING MODES 有权
不挥发存储器和方法与邻国的依赖模式的BITLEITUNGSKOMPENSATION

NON-VOLATILE MEMORY AND METHOD WITH BIT LINE COMPENSATION DEPENDENT ON NEIGHBORING OPERATING MODES
摘要:
When programming a contiguous page of memory storage units, every time a memory storage unit has reached its targeted state and is program-inhibited or locked out from further programming, it creates a perturbation on an adjacent memory storage unit still under programming. The present invention provides as part of a programming circuit and method in which an offset to the perturbation is added to the adjacent memory storage unit still under programming. The offset is added as voltage offset to a bit line of a storage unit under programming. The voltage offset is a predetermined function of whether none or one or both of its neighbors are in a mode that creates perturbation, such as in a program inhibit mode. In this way, an error inherent in programming in parallel high-density memory storage units is eliminated or minimized.
信息查询
0/0