发明授权
EP1665284B1 NON-VOLATILE MEMORY AND METHOD WITH BIT LINE COMPENSATION DEPENDENT ON NEIGHBORING OPERATING MODES
有权
不挥发存储器和方法与邻国的依赖模式的BITLEITUNGSKOMPENSATION
- 专利标题: NON-VOLATILE MEMORY AND METHOD WITH BIT LINE COMPENSATION DEPENDENT ON NEIGHBORING OPERATING MODES
- 专利标题(中): 不挥发存储器和方法与邻国的依赖模式的BITLEITUNGSKOMPENSATION
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申请号: EP04784312.3申请日: 2004-09-16
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公开(公告)号: EP1665284B1公开(公告)日: 2008-02-27
- 发明人: KHALID, Shahzad , LI, Yan , CERNEA, Raul-Adrian , MOFIDI, Mehrdad
- 申请人: SanDisk Corporation
- 申请人地址: 601 McCarthy Boulevard Milpitas, CA 95035 US
- 专利权人: SanDisk Corporation
- 当前专利权人: SanDisk Corporation
- 当前专利权人地址: 601 McCarthy Boulevard Milpitas, CA 95035 US
- 代理机构: Hitchcock, Esmond Antony
- 优先权: US667223 20030917
- 国际公布: WO2005029503 20050331
- 主分类号: G11C16/34
- IPC分类号: G11C16/34 ; G11C16/04
摘要:
When programming a contiguous page of memory storage units, every time a memory storage unit has reached its targeted state and is program-inhibited or locked out from further programming, it creates a perturbation on an adjacent memory storage unit still under programming. The present invention provides as part of a programming circuit and method in which an offset to the perturbation is added to the adjacent memory storage unit still under programming. The offset is added as voltage offset to a bit line of a storage unit under programming. The voltage offset is a predetermined function of whether none or one or both of its neighbors are in a mode that creates perturbation, such as in a program inhibit mode. In this way, an error inherent in programming in parallel high-density memory storage units is eliminated or minimized.
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