发明授权
- 专利标题: NON-VOLATILE MEMORY AND METHOD WITH BIT LINE TO BIT LINE COUPLED COMPENSATION
- 专利标题(中): NOT性存储器和法位线位线耦合补偿
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申请号: EP04783607.7申请日: 2004-09-08
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公开(公告)号: EP1671332B1公开(公告)日: 2009-06-10
- 发明人: CERNEA, Raul-Adrian , LI, Yan , MOFIDI, Mehrdad , KHALID, Shahzad
- 申请人: SanDisk Corporation
- 申请人地址: 601 McCarthy Boulevard Milpitas, CA 95035 US
- 专利权人: SanDisk Corporation
- 当前专利权人: SanDisk Corporation
- 当前专利权人地址: 601 McCarthy Boulevard Milpitas, CA 95035 US
- 代理机构: Hitchcock, Esmond Antony
- 优先权: US667222 20030917
- 国际公布: WO2005029502 20050331
- 主分类号: G11C16/34
- IPC分类号: G11C16/34 ; G11C16/04
摘要:
When programming a contiguous page of memory storage units, every time a memory storage unit has reached its targeted state and is program-inhibited or locked out from further programming, it creates a perturbation on an adjacent memory storage unit still under programming. The present invention provides as part of a programming circuit and method in which an offset to the perturbation is added to the adjacent memory storage unit still under programming. The offset is added by a controlled coupling between the adjacent bit lines of the program-inhibited memory storage unit and the still under programming memory storage unit. In this way, an error inherent in programming in parallel high-density memory storage units is eliminated or minimized.
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