发明公开
- 专利标题： Method of and program for manufacturing an electronic device
- 专利标题（中）： 用于制造电子元件的方法和程序
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申请号： EP06002925.3申请日： 2006-02-14
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公开(公告)号： EP1691408A3公开(公告)日： 2010-01-06
- 发明人: Nishimura, Eiichi , Iwasaki, Kenya
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： 3-6 Akasaka 5-chome Minato-ku Tokyo 107-8481 JP
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： 3-6 Akasaka 5-chome Minato-ku Tokyo 107-8481 JP
- 代理机构： HOFFMANN EITLE
- 优先权： JP2005036716 20050214; JP2005278843 20050926
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/8232 ; H01L21/3105
摘要：
A method of processing a substrate that enables the amount removed of a surface damaged layer to be controlled easily, and enable a decrease in wiring reliability to be prevented. A surface damaged layer having a reduced carbon concentration of a carbon-containing low dielectric constant insulating film on a substrate is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The surface damaged layer that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.
公开/授权文献
- EP1691408A2 Method of and program for manufacturing an electronic device 公开/授权日：2006-08-16
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