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1.发明公开Method of and program for manufacturing an electronic device 审中-公开赫尔斯特朗（Herfellen und Programm zur Herstellung eines elektronischen Bauelements）
公开(公告)号：EP1691408A2
公开(公告)日：2006-08-16
申请号：EP06002925.3
申请日：2006-02-14
发明人： Nishimura, Eiichi , Iwasaki, Kenya
IPC分类号： H01L21/768 , H01L21/8232 , H01L21/3105
CPC分类号： H01L21/02063 , H01L21/0206 , H01L21/31116 , H01L21/67161 , H01L21/67167 , H01L21/6719 , H01L21/67201 , H01L21/76814 , Y10S438/906
摘要： A method of processing a substrate that enables the amount removed of a surface damaged layer to be controlled easily, and enable a decrease in wiring reliability to be prevented. A surface damaged layer having a reduced carbon concentration of a carbon-containing low dielectric constant insulating film on a substrate is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The surface damaged layer that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.
摘要翻译： 一种能够容易地控制表面损伤层去除量的基板的处理方法，能够防止布线可靠性的降低。 在基板上的含碳低介电常数绝缘膜的碳浓度降低的表面损伤层在预定压力下暴露于含有氨和氟化氢的混合气体的气氛中。 已经暴露于混合气体的气氛的表面损伤层被加热到预定温度。
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公开(公告)号：EP1691408A3
公开(公告)日：2010-01-06
申请号：EP06002925.3
申请日：2006-02-14
发明人： Nishimura, Eiichi , Iwasaki, Kenya
IPC分类号： H01L21/768 , H01L21/8232 , H01L21/3105
CPC分类号： H01L21/02063 , H01L21/0206 , H01L21/31116 , H01L21/67161 , H01L21/67167 , H01L21/6719 , H01L21/67201 , H01L21/76814 , Y10S438/906
摘要： A method of processing a substrate that enables the amount removed of a surface damaged layer to be controlled easily, and enable a decrease in wiring reliability to be prevented. A surface damaged layer having a reduced carbon concentration of a carbon-containing low dielectric constant insulating film on a substrate is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The surface damaged layer that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.
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3.发明公开Method of processing substrate, post-chemical mechanical polishing cleaning method, and method of and program for manufacturing electronic device 审中-公开用于制造电子组件，其用于根据化学 - 机械抛光方法处理的基板清洗方法的方法，以及程序
公开(公告)号：EP1691409A1
公开(公告)日：2006-08-16
申请号：EP06002948.5
申请日：2006-02-14
发明人： Nishimura, Eiichi , Iwasaki, Kenya
IPC分类号： H01L21/768 , H01L21/3105 , H01L21/311
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/02074 , H01L21/31056
摘要： A method of processing a substrate which enables a surface damaged layer and polishing remnants on the surface of an insulating film to be removed, and enable the amount removed of the surface damaged layer and polishing remnants to be controlled easily. An insulating film on a substrate, which has been revealed by chemical mechanical polishing, is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The insulating film which has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.
摘要翻译： 处理衬底使表面的绝缘膜被除去的表面上损伤层和抛光残余的方法，并启用表面损伤层和抛光残余到很容易地控制的移除量。 上的基片的绝缘性片，其已经发现通过化学机械抛光，以在预定压力下的含有氨和氟化氢的混合气体的气氛中暴露于。 的绝缘膜，其中已暴露于所述混合气体的气氛中被加热到预定温度。
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