发明公开
EP1716600A1 BIPOLAR READING TECHNIQUE FOR A MEMORY CELL HAVING AN ELECTRICALLY FLOATING BODY TRANSISTOR 审中-公开
BIPOLAR读取技术用于与晶体管电浮体的存储单元

BIPOLAR READING TECHNIQUE FOR A MEMORY CELL HAVING AN ELECTRICALLY FLOATING BODY TRANSISTOR
摘要:
A technique of sampling, sensing, reading and/or determining the data state of a memory cell of a memory cell array (for example, a memory cell array having a plurality of memory cells which consist of an electrically floating body transistor). In one embodiment, the present inventions are directed to a memory cell, having an electrically floating body transistor, and/or a technique of reading the data state in such a memory cell. In this regard, the present inventions employ the intrinsic bipolar transistor current to read and/or determine the data state of the electrically floating body memory cell (for example, whether the electrically floating body memory cell is programmed in a State '0' and State ''I'). During the read operation, the data state is determined primarily by or sensed substantially using the bipolar current responsive to the read control signals and significantly less by the interface channel current component, which is negligible relatively to the bipolar component. The bipolar transistor current may be very sensitive to the floating body potential due to the high gain of the intrinsic bipolar transistor. As such, the programming window obtainable with the bipolar reading technique may be considerably higher (for example, up two orders of magnitude higher) than the programming window employing a conventional reading technique (which is based primarily on the interface channel current component.
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的(H01L29/96优先)
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
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