发明公开
- 专利标题： Capacitor and manufacturing method thereof
- 专利标题（中）： 康德勒和德森Herstellungsverfahren
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申请号： EP06017632.8申请日： 2006-08-24
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公开(公告)号： EP1758152A2公开(公告)日： 2007-02-28
- 发明人: Yamanishi, Yoshiki , Harada, Muneo , Kitano, Takahiro , Kawaguchi, Tatsuzo , Hirota, Yoshihiro , Matsuda, Kenji , Yamada, Kinji , Shinoda, Tomotaka , Wang, Daohai , Okumura, Katsuya
- 申请人： TOKYO ELECTRON LIMITED , OCTEC INC. , JSR Corporation
- 申请人地址： 3-6, Akasaka 5-chome Minato-ku, Tokyo 107-8481 JP
- 专利权人： TOKYO ELECTRON LIMITED,OCTEC INC.,JSR Corporation
- 当前专利权人： TOKYO ELECTRON LIMITED,OCTEC INC.,JSR Corporation
- 当前专利权人地址： 3-6, Akasaka 5-chome Minato-ku, Tokyo 107-8481 JP
- 代理机构： Liesegang, Eva
- 优先权： JP2005243238 20050824; JP2006195337 20060718
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01G4/12
摘要：
Atmosphere in processing apparatus (100) is adjusted to, for example, oxygen atmosphere, by gas supply source (112) and the like. Interior of thermal processing apparatus (101) is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat (161) containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus (101) at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus (101) has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus (101) and then to room temperature in processing apparatus (100), and carried out from processing apparatus (100). Before dielectric precursor layer is baked, it is maintained for predetermined time at temperature higher than temperature at which solvent in dielectric precursor layer is volatilized and lower than temperature at which dielectric precursor layer starts crystallization to vaporize residual solvent.
公开/授权文献
- EP1758152A3 Capacitor and manufacturing method thereof 公开/授权日：2007-12-05
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