公开(公告)号：EP1758152A2

公开(公告)日：2007-02-28

申请号：EP06017632.8

申请日：2006-08-24

申请人： TOKYO ELECTRON LIMITED ,  OCTEC INC. ,  JSR Corporation

发明人： Yamanishi, Yoshiki ,  Harada, Muneo ,  Kitano, Takahiro ,  Kawaguchi, Tatsuzo ,  Hirota, Yoshihiro ,  Matsuda, Kenji ,  Yamada, Kinji ,  Shinoda, Tomotaka ,  Wang, Daohai ,  Okumura, Katsuya

IPC分类号： H01L21/02 ,  H01G4/12

CPC分类号： H01L28/55

摘要： Atmosphere in processing apparatus (100) is adjusted to, for example, oxygen atmosphere, by gas supply source (112) and the like. Interior of thermal processing apparatus (101) is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat (161) containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus (101) at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus (101) has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus (101) and then to room temperature in processing apparatus (100), and carried out from processing apparatus (100). Before dielectric precursor layer is baked, it is maintained for predetermined time at temperature higher than temperature at which solvent in dielectric precursor layer is volatilized and lower than temperature at which dielectric precursor layer starts crystallization to vaporize residual solvent.

摘要翻译： 处理装置（100）中的气氛通过气体供给源（112）等调节为例如氧气氛。 将热处理装置（101）的内部设定为氧气氛并升温至规定温度。 包含形成有电介质前体层的晶片W的晶片舟皿161以晶片W中没有产生缺陷的速度被装载到热处理装置（101）中。此后，热处理装置（101）的反应管的内部温度 升温至烘烤温度，进行烘烤预定时间。 将晶片W在热处理装置（101）中冷却至规定温度，然后在处理装置（100）中冷却至室温，并从处理装置（100）进行。 在电介质前体层被烘烤之前，将其保持在高于电介质前体层中的溶剂挥发并且低于电介质前体层开始结晶以蒸发残余溶剂的温度的温度下的预定时间。

公开(公告)号：EP1758151A2

公开(公告)日：2007-02-28

申请号：EP06017631.0

申请日：2006-08-24

申请人： TOKYO ELECTRON LIMITED ,  OCTEC INC. ,  IBIDEN CO., LTD.

发明人： Yamanishi, Yoshiki ,  Harada, Muneo ,  Kitano, Takahiro ,  Kawaguchi, Tatsuzo ,  Hirota, Yoshihiro ,  Yamada, Kinji ,  Shinoda, Tomotaka ,  Okumura, Katsuya ,  Kawano, Shuichi

IPC分类号： H01L21/02 ,  H01L21/768

CPC分类号： H01L23/50 ,  H01G4/228 ,  H01G4/33 ,  H01L23/481 ,  H01L24/81 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01056 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H05K1/162 ,  H05K3/002 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/10378

摘要： A capacitor having a high quality and a manufacturing method of the same are provided.
A capacitor (10) has a lower electrode (13a) formed on an oxide film (12), a dielectric layer (14) formed on the lower electrode (13a), an upper electrode (15a,15c) formed so as to face the lower electrode (13a) with the dielectric layer (14) between, and an upper electrode (15b,15d) formed so as to cover the upper electrode (15c), an opening portion (62g) of the upper electrode (15c) and an opening portion (61g) of the dielectric layer (14). By forming the upper electrode (15a,15c) on the dielectric layer (14), it is possible to pattern the dielectric layer (14) by using the upper electrode (15a,15c) as a mask, and provide a capacitor (10) having a high-quality dielectric layer (14) by preventing impurity diffusion into the dielectric layer (14). By forming the upper electrode (15b,15d) on the dielectric layer (14), it is possible to prevent the dielectric layer (14) from being exposed to etching liquid, liquid developer, etc.

摘要翻译： 提供了具有高质量的电容器及其制造方法。 电容器（10）具有形成在氧化膜（12）上的下电极（13a），形成在下电极（13a）上的电介质层（14），形成为面对 具有电介质层（14）的下电极（13a）与形成为覆盖上电极（15c）的上电极（15b，15d）之间，上电极（15c）的开口部分（62g）和 电介质层（14）的开口部（61g）。 通过在电介质层（14）上形成上部电极（15a，15c），可以通过使用上部电极（15a，15c）作为掩模对电介质层（14）进行图案化，并提供电容器（10） 通过防止杂质扩散到电介质层（14）中而具有高质量的电介质层（14）。 通过在电介质层（14）上形成上部电极（15b，15d），可以防止电介质层（14）暴露于蚀刻液体，液体显影剂等

公开(公告)号：EP1758152A3

公开(公告)日：2007-12-05

申请号：EP06017632.8

申请日：2006-08-24

申请人： TOKYO ELECTRON LIMITED ,  OCTEC INC. ,  IBIDEN CO., LTD.

发明人： Yamanishi, Yoshiki ,  Harada, Muneo ,  Kitano, Takahiro ,  Kawaguchi, Tatsuzo ,  Hirota, Yoshihiro ,  Matsuda, Kenji ,  Yamada, Kinji ,  Shinoda, Tomotaka ,  Wang, Daohai ,  Okumura, Katsuya

IPC分类号： H01L21/02 ,  H01G4/12

CPC分类号： H01L28/55

摘要： Atmosphere in processing apparatus (100) is adjusted to, for example, oxygen atmosphere, by gas supply source (112) and the like. Interior of thermal processing apparatus (101) is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat (161) containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus (101) at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus (101) has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus (101) and then to room temperature in processing apparatus (100), and carried out from processing apparatus (100). Before dielectric precursor layer is baked, it is maintained for predetermined time at temperature higher than temperature at which solvent in dielectric precursor layer is volatilized and lower than temperature at which dielectric precursor layer starts crystallization to vaporize residual solvent.

摘要翻译： 处理装置（100）内的气氛例如通过气体供给源（112）等调整为氧气氛。 热处理设备（101）的内部设置为氧气氛并升高到预定温度。 然后，将形成有电介质前体层的晶片W的晶片舟（161）以晶片W中没有产生缺陷的速度装载到热处理装置（101）中。然后，热处理装置（101）的反应管的内部温度 升高至烘烤温度，进行预定时间的烘烤。 晶片W在热处理装置（101）中冷却至规定温度后，在处理装置（100）中冷却至室温，从处理装置（100）运出。 在电介质前体层被烘烤之前，在高于电介质前体层中的溶剂挥发温度的温度下维持预定的时间，并低于电介质前体层开始结晶以蒸发残留溶剂的温度。

公开(公告)号：EP2538212A1

公开(公告)日：2012-12-26

申请号：EP12169531.6

申请日：2007-08-14

申请人： Tokyo Electron Limited ,  Octec Inc.

发明人： Kiyomoto, Tomofumi ,  Harada, Muneo ,  Moriyama, Hiroyuki ,  Okumura, Katsuya

IPC分类号： G01N30/60 ,  G01N30/88 ,  G01N30/52

CPC分类号： G01N30/6095 ,  G01N30/52 ,  G01N2030/525

摘要： A high separation efficiency column (10) for chromatography is provided. The column for chromatography includes a first substrate (11) made of silicon and having a plurality of pillars (22) formed on one surface thereof; and a second substrate (12) bonded to the one surface of the first substrate (11) and constituting a flow path (13) together with the plurality of pillars (22) formed on the first substrate (11), wherein an anodically oxidized porous silicon layer (22a) is formed on a side surface of each pillar, and an anodically oxidized porous silicon layer (21a) is formed on a lower surface of the first substrate.

摘要翻译： 提供用于色谱的高分离效率柱（10）。 色谱柱包括：由硅制成并且在其一个表面上形成有多个柱（22）的第一基板（11） 和与所述第一基板（11）的所述一个表面接合并且与形成在所述第一基板（11）上的所述多个支柱（22）一起构成流动路径（13）的第二基板（12），其中，阳极氧化的多孔 硅层22a形成在每个柱的侧表面上，并且阳极氧化的多孔硅层21a形成在第一基板的下表面上。

公开(公告)号：EP1758151A3

公开(公告)日：2008-04-23

申请号：EP06017631.0

申请日：2006-08-24

申请人： TOKYO ELECTRON LIMITED ,  OCTEC INC. ,  IBIDEN CO., LTD.

发明人： Yamanishi, Yoshiki ,  Harada, Muneo ,  Kitano, Takahiro ,  Kawaguchi, Tatsuzo ,  Hirota, Yoshihiro ,  Yamada, Kinji ,  Shinoda, Tomotaka ,  Okumura, Katsuya ,  Kawano, Shuichi

IPC分类号： H01L21/02 ,  H01L21/60 ,  H01L23/50 ,  H01G4/228 ,  H01G4/33 ,  H05K1/16 ,  H01L23/522 ,  H01L21/768 ,  H05K3/00

CPC分类号： H01L23/50 ,  H01G4/228 ,  H01G4/33 ,  H01L23/481 ,  H01L24/81 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01056 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H05K1/162 ,  H05K3/002 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/10378

摘要： A capacitor having a high quality and a manufacturing method of the same are provided.
A capacitor (10) has a lower electrode (13a) formed on an oxide film (12), a dielectric layer (14) formed on the lower electrode (13a), an upper electrode (15a,15c) formed so as to face the lower electrode (13a) with the dielectric layer (14) between, and an upper electrode (15b,15d) formed so as to cover the upper electrode (15c), an opening portion (62g) of the upper electrode (15c) and an opening portion (61g) of the dielectric layer (14). By forming the upper electrode (15a,15c) on the dielectric layer (14), it is possible to pattern the dielectric layer (14) by using the upper electrode (15a,15c) as a mask, and provide a capacitor (10) having a high-quality dielectric layer (14) by preventing impurity diffusion into the dielectric layer (14). By forming the upper electrode (15b,15d) on the dielectric layer (14), it is possible to prevent the dielectric layer (14) from being exposed to etching liquid, liquid developer, etc.

公开(公告)号：EP1758153A2

公开(公告)日：2007-02-28

申请号：EP06119385.0

申请日：2006-08-23

申请人： TOKYO ELECTRON LIMITED ,  IBIDEN CO., LTD. ,  OCTEC INC.

发明人： Shinoda, Tomotaka ,  Yamada, Kinji ,  Kitano, Takahiro Tokyo Electron Limited ,  Yamanishi, Yoshiki Tokyo Electron Limited ,  Harada, Muneo Tokyo Electron Limited ,  Kawaguchi, Tatsuzo Tokyo Electron Limited ,  Hirota, Yoshihiro Tokyo Electron Limited ,  Okumura, Katsuya ,  Kawano, Shuichi

IPC分类号： H01L21/02

CPC分类号： H01L28/65 ,  H01L27/11507 ,  H01L28/55 ,  Y10T29/435

摘要： A dielectric film capacitor (20) includes a lower electrode (22) having an opening and formed of a material including platinum, a dielectric film (24) provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode (26) provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode (22) formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film (24) provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode (26) provided over the dielectric film.

摘要翻译： 电介质膜电容器（20）包括具有开口并由铂构成的材料的下电极（22），设置在下电极上并包括具有ABOx晶体结构的氧化物的电介质膜（24）和上电极 （26）设置在电介质膜上。 下部电极的平面面积为电介质膜的形成区域的面积的50％以上。 电介质膜电容器包括由包括铂的材料形成的厚度为10至100nm的下电极（22），设置在下电极上并包括具有ABOx晶体结构的氧化物的电介质膜（24），以及 设置在电介质膜上的上电极（26）。

公开(公告)号：EP2293318B1

公开(公告)日：2013-11-06

申请号：EP10174782.2

申请日：2010-09-01

申请人： Tokyo Electron Limited ,  Hamamatsu Photonics K.K.

发明人： Okumura, Katsuya ,  Kadosawa, Katsuji ,  Kiyomoto, Tomofumi ,  Suyama, Motohiro ,  Ishii, Atsushi

IPC分类号： H01J35/12

CPC分类号： H01J35/12 ,  H01J2235/081 ,  H01J2235/083 ,  H01J2235/087 ,  H01J2235/1204 ,  H01J2235/1291

公开(公告)号：EP0851302B1

公开(公告)日：2000-06-14

申请号：EP97122846.5

申请日：1997-12-24

申请人： TOKYO ELECTRON LIMITED ,  KABUSHIKI KAISHA TOSHIBA

发明人： Kitano, Takahiro, c/o Tokyo Electron Limited ,  Okumura, Katsuya ,  Ito, Shinichi

IPC分类号： G03F7/16

CPC分类号： G03F7/162 ,  Y10T137/2499 ,  Y10T137/8766 ,  Y10T137/87668 ,  Y10T137/87684

公开(公告)号：EP0851302A1

公开(公告)日：1998-07-01

申请号：EP97122846.5

申请日：1997-12-24

申请人： TOKYO ELECTRON LIMITED ,  KABUSHIKI KAISHA TOSHIBA

发明人： Kitano, Takahiro, c/o Tokyo Electron Limited ,  Okumura, Katsuya ,  Ito, Shinichi

IPC分类号： G03F7/16

CPC分类号： G03F7/162 ,  Y10T137/2499 ,  Y10T137/8766 ,  Y10T137/87668 ,  Y10T137/87684

摘要： A coating apparatus according to the invention comprises a spin chuck (52) for holding a substrate, resist solution tanks (71, 711 to 71n) which contain a primary resist solution, a thinner tank (72, 721) which contains thinner, a confluence valve (75, 751) communicating with the thinner tank and the resist solution tanks, first pumps (73, 731 to 73n) each for supplying the confluence valve with the primary resist solution from a corresponding one of the resist solution tanks, a second pump (74, 741) for supplying thinner from the thinner tank to the confluence valve, a mixer (76, 761) for mixing the primary treatment solution and thinner supplied from the confluence valve, a nozzle (86, 861) for applying a solution from the mixer, to the substrate held by the spin chuck, and a controller (131, 431) for controlling the first and second pumps to adjust the mixture ratio of the primary resist solution to be supplied from each of the resist solution tanks (71, 711 to 71n) to the confluence valve (75, 751), to thinner to be supplied from the thinner tank (72, 721) to the confluence valve (75, 751).

摘要翻译： 根据本发明的涂布装置包括用于保持基底的旋转卡盘（52），包含初级抗蚀剂溶液的抗蚀剂溶液罐（71,71〜71n），含有稀释剂的较薄的罐（72,721），汇合物 与较薄的罐和抗蚀剂溶液罐连通的阀（75,751），第一泵（73,731至73n），每个用于向合流阀提供来自相应的一个抗蚀剂溶液罐的主抗蚀剂溶液;第二泵 （74,741），用于从所述较薄的罐向所述汇流阀供应较薄的;用于混合所述主处理溶液和从所述汇流阀供应的稀释剂的混合器（76,761），用于施加来自所述汇流阀的溶液的喷嘴（86,861） 混合器到由旋转卡盘保持的基板和控制器（131,431），用于控制第一和第二泵，以调节要从每个抗蚀剂溶液罐（71，431）提供的主要抗蚀剂溶液的混合比， 711至71n） （75,751），以从较薄的罐（72,721）供给到汇流阀（75,751）的薄层。

公开(公告)号：EP2618360A1

公开(公告)日：2013-07-24

申请号：EP13002045.6

申请日：2010-09-01

申请人： Tokyo Electron Limited ,  Hamamatsu Photonics K.K.

发明人： Suyama, Motohiro ,  Ishii, Atsushi ,  Kiyomoto, Tomofumi ,  Kadosawa, Katsuji ,  Okumura, Katsuya

IPC分类号： H01J35/12

CPC分类号： H01J35/12 ,  H01J2235/081 ,  H01J2235/083 ,  H01J2235/087 ,  H01J2235/1204 ,  H01J2235/1291

摘要： A target for X-ray generation has a substrate (1) and a target portion (10). The substrate is comprised of diamond and has a first principal surface (1a) and a second principal surface (1b) opposed to each other. A bottomed hole (3) is formed from the first principal surface side in the substrate. The target portion is comprised of a metal deposited from a bottom surface (3a) of the hole toward the first principal surface. An entire side surface (10c) of the target portion is in close contact with an inside surface (3b) of the hole. A protecting layer (13) protecting the substrate from the electron beam is formed on the first principal surface.

摘要翻译： X射线产生的靶具有基板（1）和靶部（10）。 衬底由金刚石构成，并具有彼此相对的第一主表面（1a）和第二主表面（1b）。 从基板的第一主面侧形成有底孔（3）。 目标部分由从孔的底表面（3a）向第一主表面沉积的金属构成。 目标部分的整个侧表面（10c）与孔的内表面（3b）紧密接触。 在第一主表面上形成保护基板免受电子束的保护层（13）。