公开(公告)号：EP1758152A2

公开(公告)日：2007-02-28

申请号：EP06017632.8

申请日：2006-08-24

申请人： TOKYO ELECTRON LIMITED ,  OCTEC INC. ,  JSR Corporation

发明人： Yamanishi, Yoshiki ,  Harada, Muneo ,  Kitano, Takahiro ,  Kawaguchi, Tatsuzo ,  Hirota, Yoshihiro ,  Matsuda, Kenji ,  Yamada, Kinji ,  Shinoda, Tomotaka ,  Wang, Daohai ,  Okumura, Katsuya

IPC分类号： H01L21/02 ,  H01G4/12

CPC分类号： H01L28/55

摘要： Atmosphere in processing apparatus (100) is adjusted to, for example, oxygen atmosphere, by gas supply source (112) and the like. Interior of thermal processing apparatus (101) is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat (161) containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus (101) at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus (101) has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus (101) and then to room temperature in processing apparatus (100), and carried out from processing apparatus (100). Before dielectric precursor layer is baked, it is maintained for predetermined time at temperature higher than temperature at which solvent in dielectric precursor layer is volatilized and lower than temperature at which dielectric precursor layer starts crystallization to vaporize residual solvent.

摘要翻译： 处理装置（100）中的气氛通过气体供给源（112）等调节为例如氧气氛。 将热处理装置（101）的内部设定为氧气氛并升温至规定温度。 包含形成有电介质前体层的晶片W的晶片舟皿161以晶片W中没有产生缺陷的速度被装载到热处理装置（101）中。此后，热处理装置（101）的反应管的内部温度 升温至烘烤温度，进行烘烤预定时间。 将晶片W在热处理装置（101）中冷却至规定温度，然后在处理装置（100）中冷却至室温，并从处理装置（100）进行。 在电介质前体层被烘烤之前，将其保持在高于电介质前体层中的溶剂挥发并且低于电介质前体层开始结晶以蒸发残余溶剂的温度的温度下的预定时间。

公开(公告)号：EP1758152A3

公开(公告)日：2007-12-05

申请号：EP06017632.8

申请日：2006-08-24

申请人： TOKYO ELECTRON LIMITED ,  OCTEC INC. ,  IBIDEN CO., LTD.

发明人： Yamanishi, Yoshiki ,  Harada, Muneo ,  Kitano, Takahiro ,  Kawaguchi, Tatsuzo ,  Hirota, Yoshihiro ,  Matsuda, Kenji ,  Yamada, Kinji ,  Shinoda, Tomotaka ,  Wang, Daohai ,  Okumura, Katsuya

IPC分类号： H01L21/02 ,  H01G4/12

CPC分类号： H01L28/55

摘要： Atmosphere in processing apparatus (100) is adjusted to, for example, oxygen atmosphere, by gas supply source (112) and the like. Interior of thermal processing apparatus (101) is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat (161) containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus (101) at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus (101) has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus (101) and then to room temperature in processing apparatus (100), and carried out from processing apparatus (100). Before dielectric precursor layer is baked, it is maintained for predetermined time at temperature higher than temperature at which solvent in dielectric precursor layer is volatilized and lower than temperature at which dielectric precursor layer starts crystallization to vaporize residual solvent.

摘要翻译： 处理装置（100）内的气氛例如通过气体供给源（112）等调整为氧气氛。 热处理设备（101）的内部设置为氧气氛并升高到预定温度。 然后，将形成有电介质前体层的晶片W的晶片舟（161）以晶片W中没有产生缺陷的速度装载到热处理装置（101）中。然后，热处理装置（101）的反应管的内部温度 升高至烘烤温度，进行预定时间的烘烤。 晶片W在热处理装置（101）中冷却至规定温度后，在处理装置（100）中冷却至室温，从处理装置（100）运出。 在电介质前体层被烘烤之前，在高于电介质前体层中的溶剂挥发温度的温度下维持预定的时间，并低于电介质前体层开始结晶以蒸发残留溶剂的温度。