Invention Publication
- Patent Title: Programmable delay control in a memory
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Application No.: EP06125238.3Application Date: 1999-09-20
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Publication No.: EP1770708A2Publication Date: 2007-04-04
- Inventor: Chang, Ray , Weier, William , Wong, Richard
- Applicant: Freescale Semiconductor, Inc.
- Applicant Address: 6501 William Cannon Drive Austin, Texas 78735 US
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: 6501 William Cannon Drive Austin, Texas 78735 US
- Agency: Wray, Antony John
- Priority: US259454 19990301
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C7/22 ; H03K5/13
Abstract:
A memory has sense amplifiers that provide data onto a global data lines that are received by secondary amplifiers. The sense amplifiers and the secondary amplifiers are enabled by clocks that are timed by programmable delay circuits. The programmable delays are programmed by delay selection circuits that provide a continuous output to the programmable delay circuits. There are two delay selection circuits. One is shared by all of the programmable delay circuits that enable the sense amplifiers, and one is shared by all of the programmable delay circuits that enable the secondary amplifiers. The outputs of these two delay selection circuits are chosen to provide the output which programs the programmable delay circuits for optimizing the worst case of the access time of the memory.
Public/Granted literature
- EP1770708B1 Programmable delay control in a memory Public/Granted day:2012-11-14
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