发明公开
- 专利标题： Semiconductor device and power converter using the same
- 专利标题（中）： 半导体器件和使用该器件的功率转换器
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申请号： EP07009037.8申请日： 2000-02-11
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公开(公告)号： EP1811572A3公开(公告)日： 2007-09-19
- 发明人: Oyama, Kazuhiro , Sakano, Jyunichi , Mori, Mutsuhiro
- 申请人： Hitachi, Ltd.
- 申请人地址： 6-6, Marunouchi 1-chome Chiyoda-ku Tokyo JP
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： 6-6, Marunouchi 1-chome Chiyoda-ku Tokyo JP
- 代理机构： Calderbank, Thomas Roger
- 优先权： JP3816699 19990217
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/06 ; H01L23/528 ; H02M7/527
摘要：
An area of a narrow interval between neighboring insulating gates (7) and an area of a wide interval are provided and in the area of a wide interval, a p-type well layer deeper (9) than a p-type base layer is provided. By use of this constitution, even if an area of a narrow interval between neighboring insulating gates and an area of a wide interval are provided, the withstand voltage will not be lowered.
公开/授权文献
- EP1811572B1 Semiconductor device and power converter using the same 公开/授权日：2012-05-30
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