发明公开
EP1825522A2 LATERAL TRENCH FIELD-EFFECT TRANSISTORS IN WIDE BANDGAP SEMICONDUCTOR MATERIALS, METHODS OF MAKING, AND INTEGRATED CIRCUITS INCORPORATING THE TRANSISTORS
审中-公开
在HABLEITERMATERIALIEN宽禁带，进程页沟道场效晶体管用于生产和具有晶体管集成电路的
- 专利标题： LATERAL TRENCH FIELD-EFFECT TRANSISTORS IN WIDE BANDGAP SEMICONDUCTOR MATERIALS, METHODS OF MAKING, AND INTEGRATED CIRCUITS INCORPORATING THE TRANSISTORS
- 专利标题（中）： 在HABLEITERMATERIALIEN宽禁带，进程页沟道场效晶体管用于生产和具有晶体管集成电路的
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申请号： EP05852246.7申请日： 2005-11-30
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公开(公告)号： EP1825522A2公开(公告)日： 2007-08-29
- 发明人: SANKIN, Igor , CASADY, Jeffrey, B. , MERRETT, Jospeh, N.
- 申请人： Semisouth Laboratories, Inc.
- 申请人地址： 201 Research Boulevard Starkville MS 39759 US
- 专利权人： Semisouth Laboratories, Inc.
- 当前专利权人： Semisouth Laboratories, Inc.
- 当前专利权人地址： 201 Research Boulevard Starkville MS 39759 US
- 代理机构： Banzer, Hans-Jörg
- 优先权： US999954 20041201
- 国际公布： WO2006060302 20060608
- 主分类号： H01L31/111
- IPC分类号： H01L31/111 ; H01L21/332
摘要：
A wide bandgap semiconductor junction field effect transistor comprises source, channel, drift, and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift, and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions, can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemeneted for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monothilic microwave integrated circuits. Methods for making the transistors and inte rated circuits com rising the devices are also described.
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