利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

10 条记录 (耗时 0.011 秒)

    SELF-ALIGNED SILICON CARBIDE SEMICONDUCTOR DEVICES AND METHODS OF MAKING THE SAME
    4.
    发明公开
    SELF-ALIGNED SILICON CARBIDE SEMICONDUCTOR DEVICES AND METHODS OF MAKING THE SAME 有权
    SELF-ALIGNED碳化硅或氮化镓半导体元件AND METHOD FOR THEIR

    公开(公告)号：EP1726043A2

    公开(公告)日：2006-11-29

    申请号：EP05725593.7

    申请日：2005-03-14

    申请人： Semisouth Laboratories, Inc.

    发明人： SANKIN, Igor ,  CASADY, Janna B. ,  MERRETT, Joseph N.

    IPC分类号： H01L29/15

    CPC分类号： H01L29/66068 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/45 ,  H01L29/66863 ,  H01L29/8128

    摘要： A self-aligned silicon carbide power MESFET with improved current stability and a method of making the device are described. The device, which includes raised source and drain regions separated by a gate recess, has improved current stability as a result of reduced surface trapping effects even at low gate biases. The device can be made using a self-aligned process in which a substrate comprising an n+-doped SiC layer on an n-doped SiC channel layer is etched to define raised source and drain regions (e.g., raised fingers) using a metal etch mask. The metal etch mask is then annealed to form source and drain ohmic contacts. A single- or multilayer dielectric film is then grown or deposited and anisotropically etched. A Schottky contact layer and a final metal layer are subsequently deposited using evaporation or another anisotropic deposition technique followed by an optional isotropic etch of dielectric layer or layers.

    METHODS OF MAKING LATERAL JUNCTION FIELD EFFECT TRANSISTORS USING SELECTIVE EPITAXIAL GROWTH
    5.
    发明公开
    METHODS OF MAKING LATERAL JUNCTION FIELD EFFECT TRANSISTORS USING SELECTIVE EPITAXIAL GROWTH 审中-公开
    使用选择性外延生长制造横向结型场效应晶体管的方法

    公开(公告)号：EP2277195A2

    公开(公告)日：2011-01-26

    申请号：EP09733124.3

    申请日：2009-04-01

    申请人： Semisouth Laboratories, Inc.

    发明人： MERRETT, Joseph, Neil ,  SANKIN, Igor

    IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L21/20

    CPC分类号： H01L29/808 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66901

    摘要： Methods of making a semiconductor device such as a lateral junction field effect transistor (JFET) are described. The methods are self-aligned and involve selective epitaxial growth using a regrowth mask material to form the gate or the source/drain regions of the device. The methods can eliminate the need for ion implantation. The device can be made from a wide band-gap semiconductor material such as SiC. The regrowth mask material can be TaC. The devices can be used in harsh environments including applications involving exposure to radiation and/or high temperatures.

    摘要翻译： 描述了制造诸如横向结型场效应晶体管（JFET）的半导体器件的方法。 这些方法是自对准的并且涉及使用再生长掩模材料的选择性外延生长以形成器件的栅极或源极/漏极区域。 这些方法可以消除离子注入的需要。 该器件可以由宽带隙半导体材料如SiC制成。 再生长掩模材料可以是TaC。 该设备可用于恶劣环境，包括暴露于辐射和/或高温的应用。

    SEMICONDUCTOR DEVICE WITH SURGE CURRENT PROTECTION AND METHOD OF MAKING THE SAME
    6.
    发明公开
    SEMICONDUCTOR DEVICE WITH SURGE CURRENT PROTECTION AND METHOD OF MAKING THE SAME 审中-公开
    峰值电源保护和工艺制造半导体COMPONENT

    公开(公告)号：EP2013911A2

    公开(公告)日：2009-01-14

    申请号：EP07794508.7

    申请日：2007-05-01

    申请人： Semisouth Laboratories, Inc.

    发明人： SANKIN, Igor ,  MERRETT, Joseph Neil

    IPC分类号： H01L29/872 ,  H01L29/868

    CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/868

    摘要： A wide bandgap semiconductor device with surge current protection and a method of making the device are described. The device comprises a low doped n-type region formed by plasma etching through the first epitaxial layer grown on a heavily doped n-type substrate and a plurality of heavily doped p-type regions formed by plasma etching through the second epitaxial layer grown on the first epitaxial layer. Ohmic contacts are formed on p-type regions and on the backside of the n-type substrate. Schottky contacts are formed on the top surface of the n-type region. At normal operating conditions, the current in the device flows through the Schottky contacts. The device, however, is capable of withstanding extremely high current densities due to conductivity modulation caused by minority carrier injection from p-type regions.

    SILICON CARBIDE BIPOLAR JUNCTION TRANSISTOR WITH OVERGROWN BASE REGION
    10.
    发明公开
    SILICON CARBIDE BIPOLAR JUNCTION TRANSISTOR WITH OVERGROWN BASE REGION 有权
    WITH BARRIER成人基本区域碳化硅双极型晶体管

    公开(公告)号：EP1485940A2

    公开(公告)日：2004-12-15

    申请号：EP03709157.6

    申请日：2003-02-21

    申请人： Semisouth Laboratories, Inc.

    发明人： SANKIN, Igor ,  DUFRENE, Janna, B.

    IPC分类号： H01L21/00

    CPC分类号： H01L29/66068 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1004 ,  H01L29/1608 ,  H01L29/732

    摘要： Silicon carbide bipolar junction transistors having an overgrown base layer (18) are provided. The bipolar junction transistors can be made with a very thin (e.g., 0.3 µm or less) base layer while still possessing adequate peripheral base resistance values. Self aligning manufacturing techniques for making the silicon carbide bipolar junction transistors are also provided. Using these techniques, the spacing between emitter and base contacts on the device can be reduced. The silicon carbide bipolar junction transistors can also be provided with edge termination structures such as guard rings to increase the blocking capabilities of the device.