利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

21 条记录 (耗时 0.009 秒)

    METHODS OF MAKING LATERAL JUNCTION FIELD EFFECT TRANSISTORS USING SELECTIVE EPITAXIAL GROWTH
    1.
    发明公开
    METHODS OF MAKING LATERAL JUNCTION FIELD EFFECT TRANSISTORS USING SELECTIVE EPITAXIAL GROWTH 审中-公开
    使用选择性外延生长制造横向结型场效应晶体管的方法

    公开(公告)号：EP2277195A2

    公开(公告)日：2011-01-26

    申请号：EP09733124.3

    申请日：2009-04-01

    申请人： Semisouth Laboratories, Inc.

    发明人： MERRETT, Joseph, Neil ,  SANKIN, Igor

    IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L21/20

    CPC分类号： H01L29/808 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66901

    摘要： Methods of making a semiconductor device such as a lateral junction field effect transistor (JFET) are described. The methods are self-aligned and involve selective epitaxial growth using a regrowth mask material to form the gate or the source/drain regions of the device. The methods can eliminate the need for ion implantation. The device can be made from a wide band-gap semiconductor material such as SiC. The regrowth mask material can be TaC. The devices can be used in harsh environments including applications involving exposure to radiation and/or high temperatures.

    摘要翻译： 描述了制造诸如横向结型场效应晶体管（JFET）的半导体器件的方法。 这些方法是自对准的并且涉及使用再生长掩模材料的选择性外延生长以形成器件的栅极或源极/漏极区域。 这些方法可以消除离子注入的需要。 该器件可以由宽带隙半导体材料如SiC制成。 再生长掩模材料可以是TaC。 该设备可用于恶劣环境，包括暴露于辐射和/或高温的应用。

    SEMICONDUCTOR DEVICE WITH SURGE CURRENT PROTECTION AND METHOD OF MAKING THE SAME
    3.
    发明公开
    SEMICONDUCTOR DEVICE WITH SURGE CURRENT PROTECTION AND METHOD OF MAKING THE SAME 审中-公开
    峰值电源保护和工艺制造半导体COMPONENT

    公开(公告)号：EP2013911A2

    公开(公告)日：2009-01-14

    申请号：EP07794508.7

    申请日：2007-05-01

    申请人： Semisouth Laboratories, Inc.

    发明人： SANKIN, Igor ,  MERRETT, Joseph Neil

    IPC分类号： H01L29/872 ,  H01L29/868

    CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/868

    摘要： A wide bandgap semiconductor device with surge current protection and a method of making the device are described. The device comprises a low doped n-type region formed by plasma etching through the first epitaxial layer grown on a heavily doped n-type substrate and a plurality of heavily doped p-type regions formed by plasma etching through the second epitaxial layer grown on the first epitaxial layer. Ohmic contacts are formed on p-type regions and on the backside of the n-type substrate. Schottky contacts are formed on the top surface of the n-type region. At normal operating conditions, the current in the device flows through the Schottky contacts. The device, however, is capable of withstanding extremely high current densities due to conductivity modulation caused by minority carrier injection from p-type regions.

    Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors
    8.
    发明公开
    Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors 审中-公开
    侧沟槽Feldeffektortransistoren在半导体材料中具有宽带隙，它们的制造方法以及与晶体管集成电路

    公开(公告)号：EP2375451A2

    公开(公告)日：2011-10-12

    申请号：EP11173329.1

    申请日：2005-11-30

    申请人： Semisouth Laboratories, Inc.

    发明人： Sankin, Igor ,  Casady, Jeffrey. B ,  Merrett, Joseph N.

    IPC分类号： H01L29/423 ,  H01L29/808 ,  H01L27/098 ,  H01L29/812 ,  H01L29/20 ,  H01L29/24 ,  H01L29/47

    CPC分类号： H01L29/2003 ,  H01L27/098 ,  H01L29/1608 ,  H01L29/47 ,  H01L29/808 ,  H01L29/8122

    摘要： A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The junction field effect transistor comprises source, channel, drift, and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift, and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions, can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monolithic microwave integrated circuits. Methods for making the transistors and integrated circuits com rising the devices are also described.

    摘要翻译： 结型场效应晶体管进行说明。 该晶体管被从宽带隙半导体材料制成。 的结型场效应晶体管包括源极，沟道，漂移和漏极半导体层，以及p型植入或肖特基栅极区域。 的源极，沟道，漂移和漏极层可以外延生长。 到源极，栅极，和漏极区中的欧姆接触，可以在晶片的相同侧而形成。 所述装置可具有不同阈值电压依赖于垂直通道宽度和可被实现为两个耗尽和增强对于相同的沟道掺杂操作模式。 的装置可用于数字，模拟和单片微波集成电路。 用于制造晶体管的方法和集成电路COM上升是如此描述的设备。