发明授权
EP2087502B1 Method for forming an amorphous silicon film by deposition from a plasma
有权
一种用于通过等离子体沉积形成非晶硅膜的方法
- 专利标题: Method for forming an amorphous silicon film by deposition from a plasma
- 专利标题(中): 一种用于通过等离子体沉积形成非晶硅膜的方法
-
申请号: EP07819350.5申请日: 2007-10-26
-
公开(公告)号: EP2087502B1公开(公告)日: 2011-10-12
- 发明人: ROCA I CABARROCAS, Pere , BULKIN, Pavel , DAINEKA, Dmitri , LEEMPOEL, Patrick , DESCAMPS, Pierre , KERVYN DE MEERENDRE, Thibault
- 申请人: Dow Corning Corporation , Ecole Polytechnique
- 申请人地址: 2200 West Salzburg Road Midland, MI 48611-0994 US
- 专利权人: Dow Corning Corporation,Ecole Polytechnique
- 当前专利权人: Dow Corning Corporation,Ecole Polytechnique
- 当前专利权人地址: 2200 West Salzburg Road Midland, MI 48611-0994 US
- 代理机构: Boon, Graham Anthony
- 优先权: EP06301115 20061102
- 国际公布: WO2008052703 20080508
- 主分类号: H01J37/32
- IPC分类号: H01J37/32
摘要:
An apparatus is described for depositing a film on a substrate from a plasma. The apparatus comprises an enclosure, a plurality of plasma generator elements disposed within the enclosure, and means, also within the enclosure, for supporting the substrate. Each plasma generator element comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna, the outlet being located in, or above, the hot electron confinement envelope.
公开/授权文献
信息查询