摘要:
An apparatus is described for depositing a film on a substrate from a plasma. The apparatus comprises an enclosure, a plurality of plasma generator elements disposed within the enclosure, and means, also within the enclosure, for supporting the substrate. Each plasma generator element comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna, the outlet being located in, or above, the hot electron confinement envelope.
摘要:
A method is described of forming a film of an amorphous material on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure therein. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The said flow rate of the film precursor gas is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material.
摘要:
An apparatus is described for depositing a film on a substrate from a plasma. The apparatus comprises an enclosure, a plurality of plasma generator elements disposed within the enclosure, and means, also within the enclosure, for supporting the substrate. Each plasma generator element comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna, the outlet being located in, or above, the hot electron confinement envelope.
摘要:
A plasma excitation device is described for use in depositing a film on a substrate from a plasma formed by distributed electron cyclotron resonance. The device comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna.
摘要:
A mixer blade which is adapted to be mounted on the shaft of a vertical continuous granulating mixer, characterised in that an inner portion of the leading edge of the blade is bevelled upwards and an outer portion of the leading edge of the blade is substantially vertical or is bevelled downwards. A vertical continuous granulating mixer which comprises a shaft fitted with blades rotating within a tubular housing and having an inlet for solid particles and a spray inlet for liquid to contact the solid particles above the blades, characterised in that an inner portion of at least one of the blades is angled forwards and upwards over at least part of its area so that particles hitting the angled portion of the blade acquire an upwards velocity component.
摘要:
In an agglomeration process for the preparation of granules encapsulating a hydrophobic active material, the active material and a molten binder which has a melting point above ambient temperature are sprayed onto water soluble carrier particles while agitating the particles. A liquid which interacts exothermically with the carrier particles is sprayed onto the carrier particles separately from and just before or simultaneously with the active material and binder, so that the heat generated by the interaction reduces the cooling rate of the binder during the agglomeration process. For example the liquid can be water when the carrier particles have a positive heat of hydration and/or solution by water.
摘要:
Production of a silicon wafer coated with a passivation layer. The coated silicon wafer may be suitable for use in photovoltaic cells which convert energy from light impinging on the front face of the cell into electrical energy.