发明授权
- 专利标题： SPIN TRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY AND DESIGN METHODS
- 专利标题（中）： 磁阻STT-RAM和设计过程
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申请号： EP08745261.1申请日： 2008-04-07
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公开(公告)号： EP2137734B1公开(公告)日： 2011-11-23
- 发明人: JUNG, Seong-ook , SANI, Mehdi, Hamidi , KANG, Seung H. , YOON, Sei Seung
- 申请人： QUALCOMM Incorporated
- 申请人地址： Attn: International IP Administration 5775 Morehouse Drive San Diego, CA 92121 US
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： Attn: International IP Administration 5775 Morehouse Drive San Diego, CA 92121 US
- 代理机构： Dunlop, Hugh Christopher
- 优先权： US910255P 20070405; US972674 20080111
- 国际公布： WO2008124704 20081016
- 主分类号： G11C11/16
- IPC分类号： G11C11/16
摘要：
Systems, circuits and methods for determining read and write voltages for a given word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A first voltage can be supplied to the write operations so that the write operations occur in the saturation region (454) of the word line transistor. A second voltage, which is less than the first voltage, can be supplied for read operations so that the read operations occur in the linear region (452) of the word line transistor.
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