发明公开
EP2162917A1 MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
审中-公开
CELL可逆的，选择性TOWED电阻切换元件和方法形成该
- 专利标题： MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
- 专利标题（中）： CELL可逆的，选择性TOWED电阻切换元件和方法形成该
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申请号： EP08768806.5申请日： 2008-06-27
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公开(公告)号： EP2162917A1公开(公告)日： 2010-03-17
- 发明人: SCHRICKER, April , HERNER, S., Brad , CLARK, Mark
- 申请人： Sandisk 3d, Llc
- 申请人地址： 601 McCarthy Blve. Milpitas, CA 95035 US
- 专利权人： Sandisk 3d, Llc
- 当前专利权人： Sandisk 3d, Llc
- 当前专利权人地址： 601 McCarthy Blve. Milpitas, CA 95035 US
- 代理机构： Hitchcock, Esmond Antony
- 优先权： US772088 20070629; US772082 20070629
- 国际公布： WO2009005699 20090108
- 主分类号： H01L27/102
- IPC分类号： H01L27/102 ; H01L21/822 ; H01L27/06 ; H01L27/24 ; H01L45/00 ; H01L27/10
摘要：
A method of forming a memory cell is provided that includes (1) forming a first conductor (206) above a substrate; (2) forming a reversible resistance-switching element (202) above the first conductor using a selective growth process; (3) forming a diode (204) above the first conductor; and (4) forming a second conductor (208) above the diode and the reversible resistance-switching element so as to obtain a crosspoint memory device. The switching element can also be steered by a TFT. The switching element contains a difficult to etch material, e.g. TiO2, and is formed without etching this material by means of oxidising another material, e.g. Ti or TiN.
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