发明公开
- 专利标题： VERFAHREN ZUM ELEKTRONENSTRAHLINDUZIERTEN ÄTZEN VON MIT GALLIUM VERUNREINIGTEN SCHICHTEN
- 专利标题（英）： Method for electron beam induced etching of layers contaminated with gallium
- 专利标题（中）： 方法已植入蛋鸡镓的电子诱导蚀刻
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申请号： EP09777811.2申请日： 2009-08-11
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公开(公告)号： EP2313913A1公开(公告)日： 2011-04-27
- 发明人: AUTH, Nicole , SPIES, Petra , BECKER, Rainer , HOFMANN, Thorsten , EDINGER, Klaus
- 申请人： Carl Zeiss SMS GmbH
- 申请人地址： Carl-Zeiss-Promenade 10 07745 Jena DE
- 专利权人： Carl Zeiss SMS GmbH
- 当前专利权人： Carl Zeiss SMS GmbH
- 当前专利权人地址： Carl-Zeiss-Promenade 10 07745 Jena DE
- 代理机构： Wegner, Hans
- 优先权： DE102008037951 20080814
- 国际公布： WO2010017963 20100218
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/3213 ; H01L21/3065
摘要：
The invention relates to a method for electron beam induced etching of a layer (120, 122) contaminated with gallium. Said method consists of the following steps: at least one first compound containing halogen is provided as an etching gas on one area on which an electron beam strikes the layer (120, 220) and at least one second compound containing halogen is provided as a precursor gas for removing gallium from said area.
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