公开(公告)号：EP2715767A1

公开(公告)日：2014-04-09

申请号：EP12725622.0

申请日：2012-05-25

申请人： Carl Zeiss SMS GmbH

发明人： BAUR, Christof ,  EDINGER, Klaus ,  HOFMANN, Thorsten ,  BARALIA, Gabriel ,  BUDACH, Michael

IPC分类号： H01J37/28 ,  H01J37/244 ,  H01J37/304 ,  G01Q10/00

CPC分类号： G01B15/00 ,  B82Y35/00 ,  G01Q30/02 ,  G06K7/0004 ,  H01J37/244 ,  H01J37/28 ,  H01J37/3045 ,  H01J2237/2817 ,  H01J2237/2818 ,  H01J2237/2826 ,  H01J2237/30444

摘要： The present invention refers to an apparatus and a method for investigating an object with a scanning particle microscope and at least one scanning probe microscope with a probe, wherein the scanning particle microscope and the at least one scanning probe microscope are spaced with respect to each other in a common vacuum chamber so that a distance between the optical axis of the scanning particle microscope and the measuring point of the scanning probe microscope in the direction perpendicular to the optical axis of the scanning particle microscope is larger than the maximum field of view of both the scanning probe microscope and the scanning particle microscope, wherein the method comprises the step of determining the distance between the measuring point of the scanning probe microscope and the optical axis of the scanning particle microscope.

摘要翻译： 本发明涉及一种用扫描粒子显微镜和至少一个具有探针的扫描探针显微镜研究物体的装置和方法，其中扫描微粒显微镜和至少一个扫描探针显微镜相对于彼此间隔开 在共同的真空室中，使得扫描粒子显微镜的光轴与扫描探针显微镜的测量点在垂直于扫描粒子显微镜的光轴的方向上的距离大于两者的最大视场 扫描探针显微镜和扫描粒子显微镜，其中所述方法包括确定扫描探针显微镜的测量点与扫描粒子显微镜的光轴之间的距离的步骤。

公开(公告)号：EP2581789A1

公开(公告)日：2013-04-17

申请号：EP11185280.2

申请日：2011-10-14

申请人： Fundació Institut de Ciències Fotòniques ,  Institució Catalana de Recerca i Estudis Avançats ,  Carl Zeiss SMS GmbH

发明人： Pruneri, Valerio ,  Carrilero, Alberto ,  Peters, Jan-Hendrik

IPC分类号： G03F1/22 ,  G03F1/38

CPC分类号： G03F1/22 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/146 ,  G03F1/38

摘要： The present inventions relates to a substrate for a photolithographic mask comprising a coating deposited on a rear surface of the substrate, wherein the coating comprises (a) at least one electrically conducting layer, and (b) wherein a thickness of the at least one layer is smaller than 30 nm, preferably smaller than 20 nm, and most preferably smaller than 10 nm.

摘要翻译： 本发明涉及一种用于光刻掩模包括沉积在基片的后表面上的涂层的基材，worin该涂层包括（a）至少一个导电层，和（b）worin的厚度，所述至少一个层的 是小于30nm，优选小于20nm，并且最优选小于10纳米。

公开(公告)号：EP2506294A1

公开(公告)日：2012-10-03

申请号：EP12171753.2

申请日：2009-08-13

申请人： Carl Zeiss SMS GmbH

发明人： Auth, Nicole ,  Spies, Petra ,  Becker, Rainer ,  Hofmann, Thorsten ,  Edinger, Klaus

IPC分类号： H01L21/311 ,  H01L21/3065 ,  H01L21/3213

CPC分类号： H01L21/3065 ,  H01L21/31116 ,  H01L21/32136

摘要： Die Erfindung betrifft ein Verfahren zum elektronenstrahlinduzierten Ätzen eines Materials (100, 200) mit den Verfahrensschritten des Bereitstellens zumindest eines Ätzgases an einer Stelle des Materials (100, 200), an der ein Elektronenstrahl auf das Material (100, 200) trifft und des gleichzeitigen Bereitsteilens zumindest eines Passivierungsgases, das geeignet ist, spontanes Ätzen durch das zumindest eine Ätzgas zu verlangsamen oder zu unterbinden.

摘要翻译： 在半导体蚀刻工艺中，蚀刻气体与电子束同时被引导到一层硅，以及钝化气体，其缓慢或防止自发蚀刻工艺。 蚀刻气体是氙二氟化物，钝化气体是氨。

公开(公告)号：EP2331726A1

公开(公告)日：2011-06-15

申请号：EP09777750.2

申请日：2009-08-07

申请人： Carl Zeiss SMS GmbH

发明人： AUTH, Nicole ,  SPIES, Petra ,  BECKER, Rainer ,  HOFMANN, Thorsten ,  EDINGER, Klaus

IPC分类号： C23C16/48 ,  C23C16/16 ,  C23C16/04 ,  H01L21/768

CPC分类号： C23C16/487 ,  C23C16/047 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76879 ,  H01L21/76892 ,  H01L21/76898

摘要： The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl. Said method consists of the following steps: at least one electron beam is provided on one area of a substrate (90), the at least one metal carbonyl is stored at a first temperature, and then heated to at least a second temperature prior to placing it on the area on which the at least one electron beam strikes the substrate (90).

摘要翻译： 本发明涉及一种用于从金属羰基电子束感应沉积导电材料的方法，其方法步骤是在衬底的位置处提供至少一个电子束，在第一温度下储存至少一种金属羰基，以及加热 所述至少一种金属羰基至所述至少一个第二温度在所述至少一个电子束冲击所述基底的位置之前提供。

公开(公告)号：EP2313913A1

公开(公告)日：2011-04-27

申请号：EP09777811.2

申请日：2009-08-11

申请人： Carl Zeiss SMS GmbH

发明人： AUTH, Nicole ,  SPIES, Petra ,  BECKER, Rainer ,  HOFMANN, Thorsten ,  EDINGER, Klaus

IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/3056 ,  H01L21/31116 ,  H01L21/32136

摘要： The invention relates to a method for electron beam induced etching of a layer (120, 122) contaminated with gallium. Said method consists of the following steps: at least one first compound containing halogen is provided as an etching gas on one area on which an electron beam strikes the layer (120, 220) and at least one second compound containing halogen is provided as a precursor gas for removing gallium from said area.

公开(公告)号：EP1943660B9

公开(公告)日：2009-09-09

申请号：EP05801831.8

申请日：2005-10-28

申请人： Carl Zeiss SMS GmbH

发明人： PLATZGUMMER, Elmar ,  KNIPPELMEYER, Rainer

IPC分类号： H01J37/04 ,  H01J37/317

CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3023 ,  H01J2237/0435 ,  H01J2237/30472 ,  H01J2237/31754 ,  H01J2237/31774

摘要： A charged particle beam exposure system has a blanking aperture array (31) having groups of apertures (53) controlled by shift registers (75), wherein different inputs (C) to the shift registers influence a different number of apertures. Charged particle beamlets traversing the apertures are scanned across a charged particle sensitive substrate in synchronism with a clock signal of the shift registers.

公开(公告)号：EP1777728A1

公开(公告)日：2007-04-25

申请号：EP05022915.2

申请日：2005-10-20

申请人： Carl Zeiss SMS GmbH

发明人： Buschbeck, Herbert, Dipl.-Ing. ,  Platzgummer, Elmar, Dr. Dipl.-Ing. ,  Stengl, Gerhard, Dr. Dipl.-Ing. ,  Vonach, Herbert, Dr. Prof.

IPC分类号： H01J37/147 ,  H01J37/317 ,  H01J37/21

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/147 ,  H01J37/21 ,  H01J2237/0492 ,  H01J2237/24578

摘要： A charged particle lithography system comprises a particle source for generating a beam of charged particles, a pattern defining structure and a particle-optical projection system for imaging the pattern defined by the pattern defining structure onto a substrate. The particle-optical projection system comprises a focusing first magnetic lens (403) comprising an outer pole piece (411) having a radial inner end (411'), and an inner pole piece (412) having a lowermost end (412') disposed closest to the radial inner end of the outer pole piece, a gap being formed those; a focusing electrostatic lens (450) having at least a first electrode (451) and a second electrode (452) disposed in a region of the gap; and a controller (C) configured to control a focusing power of the first electrostatic lens based on a signal indicative of a distance of a surface of the substrate from a portion of the first magnetic lens disposed closest to the substrate.

公开(公告)号：EP1515172B1

公开(公告)日：2006-12-13

申请号：EP04021071.8

申请日：2004-09-04

申请人： Carl Zeiss SMS GmbH

发明人： Hage, Knut

IPC分类号： G02B7/02

CPC分类号： G02B7/026

公开(公告)号：EP1399771B1

公开(公告)日：2006-07-26

申请号：EP02747433.7

申请日：2002-06-26

申请人： Carl Zeiss SMS GmbH

发明人： ENGEL, Thomas ,  HARNISCH, Wolfgang ,  HEISE, Jürgen

IPC分类号： G02B21/06

CPC分类号： G02B21/06 ,  Y10S385/901

摘要： The invention relates to a device for flat illumination of an object field in an optical apparatus and to an optical apparatus having said device, said optical apparatus being, for example, microscopes, including microlithography simulation microscopes, wherein a flat illumination, i.e. extending over a singular object point, of the object to be examined is required. The device comprises a laser light source (8) and a fiber optic cable (9) having at least one optic fiber through which the light is guided from the laser light source (8) to the object field. The optic fiber is configured and designed in such a way that the intensity of the illumination light is increasingly homogenized in the cross section of the optical fiber during its course from the end on the incidence side to the end on the radiation side and the illumination light from the end on the radiation side of optical fiber is directed to the object (O) with substantially homogenous intensity distribution.

公开(公告)号：EP1521067A3

公开(公告)日：2005-04-27

申请号：EP04021937.0

申请日：2004-09-15

申请人： Carl Zeiss SMS GmbH

发明人： Engel, Thomas, Dr.

IPC分类号： G02B21/16 ,  G02B17/06

CPC分类号： G03F7/70258 ,  G02B17/0663 ,  G03F1/84 ,  G21K1/06

摘要： Es wird beschrieben ein optisches Abbildungssystem, das ein Objekt (2) in eine Bildebene (3) abbildet und das aufweist einen Beleuchtungsstrahlengang (5), in den Beleuchtungsstrahlung in einem Wellenlängenbereich unterhalb 100 nm eingekoppelt wird und der zur Einstellung der numerischen Apertur der Beleuchtung eine Sigma-Blende (8) aufweist, einen Abbildungsstrahlengang (6), der zur Einstellung der numerischen Apertur der Abbildung eine NA-Blende (10) aufweist und in der Bildebene (3) ein vergrößertes Bild der Maske (2) erzeugt, wobei Beleuchtungs- und Abbildungsstrahlengang (5, 6) eine reflektive Optik (7, 9) aufweisen, wobei eine Justierabbildungseinrichtung (11, 15, 16, 17, 6) vorgesehen ist, die die gegenseitige Lage von Sigma- und NA-Blende (8, 10) abbildet.