公开(公告)号：EP2331726A1

公开(公告)日：2011-06-15

申请号：EP09777750.2

申请日：2009-08-07

申请人： Carl Zeiss SMS GmbH

发明人： AUTH, Nicole ,  SPIES, Petra ,  BECKER, Rainer ,  HOFMANN, Thorsten ,  EDINGER, Klaus

IPC分类号： C23C16/48 ,  C23C16/16 ,  C23C16/04 ,  H01L21/768

CPC分类号： C23C16/487 ,  C23C16/047 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76879 ,  H01L21/76892 ,  H01L21/76898

摘要： The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl. Said method consists of the following steps: at least one electron beam is provided on one area of a substrate (90), the at least one metal carbonyl is stored at a first temperature, and then heated to at least a second temperature prior to placing it on the area on which the at least one electron beam strikes the substrate (90).

摘要翻译： 本发明涉及一种用于从金属羰基电子束感应沉积导电材料的方法，其方法步骤是在衬底的位置处提供至少一个电子束，在第一温度下储存至少一种金属羰基，以及加热 所述至少一种金属羰基至所述至少一个第二温度在所述至少一个电子束冲击所述基底的位置之前提供。

公开(公告)号：EP2313913A1

公开(公告)日：2011-04-27

申请号：EP09777811.2

申请日：2009-08-11

申请人： Carl Zeiss SMS GmbH

发明人： AUTH, Nicole ,  SPIES, Petra ,  BECKER, Rainer ,  HOFMANN, Thorsten ,  EDINGER, Klaus

IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/3056 ,  H01L21/31116 ,  H01L21/32136

摘要： The invention relates to a method for electron beam induced etching of a layer (120, 122) contaminated with gallium. Said method consists of the following steps: at least one first compound containing halogen is provided as an etching gas on one area on which an electron beam strikes the layer (120, 220) and at least one second compound containing halogen is provided as a precursor gas for removing gallium from said area.

公开(公告)号：EP2702603A2

公开(公告)日：2014-03-05

申请号：EP12718639.3

申请日：2012-04-26

申请人： Carl Zeiss SMS GmbH

发明人： BRET, Tristan ,  SPIES, Petra ,  HOFMANN, Thorsten

IPC分类号： H01J37/304 ,  H01J37/305 ,  G03F1/74

CPC分类号： H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/74 ,  H01J37/3056 ,  H01J2237/31737 ,  H01J2237/31744

摘要： The invention relates to a method for processing a substrate with a focussed particle beam which incidents on the substrate, the method comprising the steps of: (a) generating at least one reference mark on the substrate using the focused particle beam and at least one processing gas, (b) determining a reference position of the at least one reference mark, (c) processing the substrate using the reference position of the reference mark, and (d) removing the at least one reference mark from the substrate.

摘要翻译： 本发明涉及一种用于处理一基板与聚焦粒子束其中在基片上的事件，该方法包括以下步骤：（a）产生关于使用聚焦粒子束和至少一个处理基板的至少一个参考标记 气体，（b）中确定的挖掘的所述至少一个参考标记的基准位置，（c）使用所述基准标记的基准位置处理所述底物，和（d）从所述衬底去除所述至少一个参考标记。

公开(公告)号：EP2223327B1

公开(公告)日：2013-04-17

申请号：EP08864869.6

申请日：2008-12-18

申请人： Carl Zeiss SMS GmbH

发明人： AUTH, Nicole ,  SPIES, Petra ,  BRET, Tristan ,  BECKER, Rainer ,  HOFMANN, Thorsten ,  EDINGER, Klaus

IPC分类号： H01J37/28 ,  C23F4/00 ,  H01L21/66 ,  H01L21/768 ,  H01J37/305

CPC分类号： C23F4/00 ,  H01J37/3056 ,  H01J2237/28 ,  H01J2237/3174 ,  H01L21/76894 ,  H01L22/22 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2313914B1

公开(公告)日：2012-08-08

申请号：EP09777868.2

申请日：2009-08-13

申请人： Carl Zeiss SMS GmbH

发明人： AUTH, Nicole ,  SPIES, Petra ,  BECKER, Rainer ,  HOFMANN, Thorsten ,  EDINGER, Klaus

IPC分类号： H01L21/311 ,  H01L21/3065 ,  H01L21/3213

CPC分类号： H01L21/3065 ,  H01L21/31116 ,  H01L21/32136

摘要： The invention relates to a method for electron beam induced etching of a material (100, 200). Said method consists of the following steps: at least one etching gas is provided on one area of the material (100, 200) on which an electron beam strikes said material (100, 200) and at least one passivation gas that is used to slow down or prevent spontaneous etching by the at least one etching gas is provided.

公开(公告)号：EP2313913B1

公开(公告)日：2013-01-09

申请号：EP09777811.2

申请日：2009-08-11

申请人： Carl Zeiss SMS GmbH

发明人： AUTH, Nicole ,  SPIES, Petra ,  BECKER, Rainer ,  HOFMANN, Thorsten ,  EDINGER, Klaus

IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/3056 ,  H01L21/31116 ,  H01L21/32136

公开(公告)号：EP2313914A1

公开(公告)日：2011-04-27

申请号：EP09777868.2

申请日：2009-08-13

申请人： Carl Zeiss SMS GmbH

发明人： AUTH, Nicole ,  SPIES, Petra ,  BECKER, Rainer ,  HOFMANN, Thorsten ,  EDINGER, Klaus

IPC分类号： H01L21/311 ,  H01L21/3065 ,  H01L21/3213

CPC分类号： H01L21/3065 ,  H01L21/31116 ,  H01L21/32136

摘要： The invention relates to a method for electron beam induced etching of a material (100, 200). Said method consists of the following steps: at least one etching gas is provided on one area of the material (100, 200) on which an electron beam strikes said material (100, 200) and at least one passivation gas that is used to slow down or prevent spontaneous etching by the at least one etching gas is provided.