发明公开
EP2348534A3 Apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
审中-公开
装置用于改善MOSFET的使用累积电荷水槽的线性
- 专利标题： Apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
- 专利标题（中）： 装置用于改善MOSFET的使用累积电荷水槽的线性
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申请号： EP11153247.9申请日： 2006-07-11
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公开(公告)号： EP2348534A3公开(公告)日： 2012-06-06
- 发明人: Brindle, Christopher, N. , Stuber, Michael, A. , Kelly, Dylan, J. , Kemerling, Clint, L. , Imthurn, George, P. , Welstand, Robert, B. , Burgener, Mark, L.
- 申请人： PEREGRINE SEMICONDUCTOR CORPORATION
- 申请人地址： 9380 Carroll Park Drive San Diego, CA 92121 US
- 专利权人： PEREGRINE SEMICONDUCTOR CORPORATION
- 当前专利权人： PEREGRINE SEMICONDUCTOR CORPORATION
- 当前专利权人地址： 9380 Carroll Park Drive San Diego, CA 92121 US
- 代理机构： Richards, John
- 优先权： US698523P 20050711; US484370 20060710
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01P1/15
摘要：
An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
a) a MOSFET having a floating body, wherein the floating body MOSFET selectively operates in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET operates in the accumulated charge regime; and
b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein the ACS removes or otherwise controls the accumulated charge in the MOSFET body.
a) a MOSFET having a floating body, wherein the floating body MOSFET selectively operates in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET operates in the accumulated charge regime; and
b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein the ACS removes or otherwise controls the accumulated charge in the MOSFET body.
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