公开(公告)号：EP2348534A2

公开(公告)日：2011-07-27

申请号：EP11153247.9

申请日：2006-07-11

申请人： PEREGRINE SEMICONDUCTOR CORPORATION

发明人： Brindle, Christopher, N. ,  Stuber, Michael, A. ,  Kelly, Dylan, J. ,  Kemerling, Clint, L. ,  Imthurn, George, P. ,  Welstand, Robert, B. ,  Burgener, Mark, L.

IPC分类号： H01L29/786 ,  H01P1/15

CPC分类号： H03K17/162 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/78609 ,  H01L29/78615 ,  H01L29/78681 ,  H01L29/78684 ,  H03K17/687 ,  H03K2217/0018

摘要： An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
a) a MOSFET having a floating body, wherein the floating body MOSFET selectively operates in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET operates in the accumulated charge regime; and
b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein the ACS removes or otherwise controls the accumulated charge in the MOSFET body.

摘要翻译： 累积电荷控制（ACC）浮体MOSFET（ACC MOSFET），angepasst以控制MOSFET当MOSFET在累积电荷制度操作中的非线性响应，其包括：a）具有浮体，worin浮体MOSFET的MOSFET 选择性地操作在累积电荷制度，和worin积累的电荷存在于浮体MOSFET当MOSFET中的累积电荷制度操作的主体; 和b）累积的电荷接收器（ACS）操作地耦合到所述MOSFET的体，所述worin ACS除去或以其它方式的控制中的MOSFET的体积累的电荷。

公开(公告)号：EP2348534A3

公开(公告)日：2012-06-06

申请号：EP11153247.9

申请日：2006-07-11

申请人： PEREGRINE SEMICONDUCTOR CORPORATION

发明人： Brindle, Christopher, N. ,  Stuber, Michael, A. ,  Kelly, Dylan, J. ,  Kemerling, Clint, L. ,  Imthurn, George, P. ,  Welstand, Robert, B. ,  Burgener, Mark, L.

IPC分类号： H01L29/786 ,  H01P1/15

CPC分类号： H03K17/162 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/78609 ,  H01L29/78615 ,  H01L29/78681 ,  H01L29/78684 ,  H03K17/687 ,  H03K2217/0018

摘要： An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
a) a MOSFET having a floating body, wherein the floating body MOSFET selectively operates in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET operates in the accumulated charge regime; and
b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein the ACS removes or otherwise controls the accumulated charge in the MOSFET body.

公开(公告)号：EP2348533A3

公开(公告)日：2012-06-06

申请号：EP11153241.2

申请日：2006-07-11

申请人： PEREGRINE SEMICONDUCTOR CORPORATION

发明人： Brindle, Christopher, N. ,  Stuber, Michael, A. ,  Kelly, Dylan, J. ,  Kemerling, Clint, L. ,  Imthurn, George, P. ,  Welstand, Robert, B. ,  Burgener, Mark, L.

IPC分类号： H01L29/786 ,  H01P1/15

CPC分类号： H03K17/162 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/78609 ,  H01L29/78615 ,  H01L29/78681 ,  H01L29/78684 ,  H03K17/687 ,  H03K2217/0018

摘要： An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
a) a MOSFET having a floating body, wherein the floating body MOSFET selectively operates in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET operates in the accumulated charge regime; and
b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein the ACS removes or otherwise controls the accumulated charge in the MOSFET body.

公开(公告)号：EP2348535A2

公开(公告)日：2011-07-27

申请号：EP11153281.8

申请日：2006-07-11

申请人： PEREGRINE SEMICONDUCTOR CORPORATION

发明人： Brindle, Christopher, N. ,  Stuber, Michael, A. ,  Kelly, Dylan, J. ,  Kemerling, Clint, L. ,  Imthurn, George, P. ,  Welstand, Robert, B. ,  Burgener, Mark, L.

IPC分类号： H01L29/786 ,  H01P1/15

CPC分类号： H03K17/162 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/78609 ,  H01L29/78615 ,  H01L29/78681 ,  H01L29/78684 ,  H03K17/687 ,  H03K2217/0018

摘要： An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
a) a MOSFET having a floating body, wherein the floating body MOSFET selectively operates in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET operates in the accumulated charge regime; and
b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein the ACS removes or otherwise controls the accumulated charge in the MOSFET body.

摘要翻译： 累积电荷控制（ACC）浮体MOSFET（ACC MOSFET），angepasst以控制MOSFET当MOSFET在累积电荷制度操作中的非线性响应，其包括：a）具有浮体，worin浮体MOSFET的MOSFET 选择性地操作在累积电荷制度，和worin积累的电荷存在于浮体MOSFET当MOSFET中的累积电荷制度操作的主体; 和b）累积的电荷接收器（ACS）操作地耦合到所述MOSFET的体，所述worin ACS除去或以其它方式的控制中的MOSFET的体积累的电荷。

公开(公告)号：EP2348535A3

公开(公告)日：2012-06-06

申请号：EP11153281.8

申请日：2006-07-11

申请人： PEREGRINE SEMICONDUCTOR CORPORATION

发明人： Brindle, Christopher, N. ,  Stuber, Michael, A. ,  Kelly, Dylan, J. ,  Kemerling, Clint, L. ,  Imthurn, George, P. ,  Welstand, Robert, B. ,  Burgener, Mark, L.

IPC分类号： H01L29/786 ,  H01P1/15

CPC分类号： H03K17/162 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/78609 ,  H01L29/78615 ,  H01L29/78681 ,  H01L29/78684 ,  H03K17/687 ,  H03K2217/0018

摘要： An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
a) a MOSFET having a floating body, wherein the floating body MOSFET selectively operates in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET operates in the accumulated charge regime; and
b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein the ACS removes or otherwise controls the accumulated charge in the MOSFET body.

公开(公告)号：EP2348532A3

公开(公告)日：2012-05-30

申请号：EP11153227.1

申请日：2006-07-11

申请人： PEREGRINE SEMICONDUCTOR CORPORATION

发明人： Brindle, Christopher, N. ,  Stuber, Michael, A. ,  Kelly, Dylan, J. ,  Kemerling, Clint, L. ,  Imthurn, George, P. ,  Welstand, Robert, B. ,  Burgener, Mark, L.

IPC分类号： H01L29/786 ,  H01P1/15

CPC分类号： H03K17/162 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/78609 ,  H01L29/78615 ,  H01L29/78681 ,  H01L29/78684 ,  H03K17/687 ,  H03K2217/0018

摘要： An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
a) a MOSFET having a floating body, wherein the floating body MOSFET selectively operates in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET operates in the accumulated charge regime; and
b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein the ACS removes or otherwise controls the accumulated charge in the MOSFET body.

公开(公告)号：EP2348533A2

公开(公告)日：2011-07-27

申请号：EP11153241.2

申请日：2006-07-11

申请人： PEREGRINE SEMICONDUCTOR CORPORATION

发明人： Brindle, Christopher, N. ,  Stuber, Michael, A. ,  Kelly, Dylan, J. ,  Kemerling, Clint, L. ,  Imthurn, George, P. ,  Welstand, Robert, B. ,  Burgener, Mark, L.

IPC分类号： H01L29/786 ,  H01P1/15

CPC分类号： H03K17/162 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/78609 ,  H01L29/78615 ,  H01L29/78681 ,  H01L29/78684 ,  H03K17/687 ,  H03K2217/0018

摘要： An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
a) a MOSFET having a floating body, wherein the floating body MOSFET selectively operates in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET operates in the accumulated charge regime; and
b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein the ACS removes or otherwise controls the accumulated charge in the MOSFET body.

摘要翻译： 一种累积电荷控制（ACC）浮体MOSFET（ACC MOSFET），适用于在MOSFET工作在累积充电状态时控制MOSFET的非线性响应，包括：a）具有浮体的MOSFET，其中浮体MOSFET 选择性地在累积充电状态下操作，并且其中当MOSFET在累积充电状态下操作时，积聚电荷存在于浮体MOSFET的主体中; 和b）可操作地耦合到MOSFET的主体的累积电荷汇（ACS），其中ACS去除或以其他方式控制MOSFET主体中的累积电荷。

公开(公告)号：EP2348532A2

公开(公告)日：2011-07-27

申请号：EP11153227.1

申请日：2006-07-11

申请人： PEREGRINE SEMICONDUCTOR CORPORATION

发明人： Brindle, Christopher, N. ,  Stuber, Michael, A. ,  Kelly, Dylan, J. ,  Kemerling, Clint, L. ,  Imthurn, George, P. ,  Welstand, Robert, B. ,  Burgener, Mark, L.

IPC分类号： H01L29/786 ,  H01P1/15

CPC分类号： H03K17/162 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/78609 ,  H01L29/78615 ,  H01L29/78681 ,  H01L29/78684 ,  H03K17/687 ,  H03K2217/0018

摘要： An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
a) a MOSFET having a floating body, wherein the floating body MOSFET selectively operates in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET operates in the accumulated charge regime; and
b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein the ACS removes or otherwise controls the accumulated charge in the MOSFET body.

摘要翻译： 累积电荷控制（ACC）浮体MOSFET（ACC MOSFET），angepasst以控制MOSFET当MOSFET在累积电荷制度操作中的非线性响应，其包括：a）具有浮体，worin浮体MOSFET的MOSFET 选择性地操作在累积电荷制度，和worin积累的电荷存在于浮体MOSFET当MOSFET中的累积电荷制度操作的主体; 和b）累积的电荷接收器（ACS）操作地耦合到所述MOSFET的体，所述worin ACS除去或以其它方式的控制中的MOSFET的体积累的电荷。