发明公开
- 专利标题： COAXIAL HOLLOW CATHODE PLASMA ASSISTED DIRECTED VAPOR DEPOSITION AND RELATED METHOD THEREOF
- 专利标题（中）： 同轴空心阴极等离子体辅助蒸发取向和相关程序
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申请号： EP10746778申请日： 2010-02-24
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公开(公告)号： EP2401232A4公开(公告)日： 2015-04-01
- 发明人: WADLEY HAYDN N G , MATTAUSCH GOESTA , MORGNER HENRY , ROEGNER FRANK-HOLM
- 申请人： UNIV VIRGINIA PATENT FOUND , FRAUNHOFER GES ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E V
- 专利权人： UNIV VIRGINIA PATENT FOUND,FRAUNHOFER GES ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E V
- 当前专利权人： UNIV VIRGINIA PATENT FOUND,FRAUNHOFER GES ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E V
- 优先权： US15489009 2009-02-24; US24808209 2009-10-02
- 主分类号： C01B33/12
- IPC分类号： C01B33/12 ; C23C16/513 ; H01J37/305 ; H01J37/32 ; H01J37/34 ; H05H1/24
摘要：
A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.
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