发明公开
EP2402982A1 Method for manufacturing thin film capacitor and thin film capacitor obtained by the same
审中-公开
一种用于制造薄膜电容器和由此方法获得的薄膜电容器
- 专利标题： Method for manufacturing thin film capacitor and thin film capacitor obtained by the same
- 专利标题（中）： 一种用于制造薄膜电容器和由此方法获得的薄膜电容器
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申请号： EP10305716.2申请日： 2010-07-01
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公开(公告)号： EP2402982A1公开(公告)日： 2012-01-04
- 发明人: Sakurai, Hideaki , Watanabe, Toshiaki , Soyama, Nobuyuki , Guegan, Guillaume
- 申请人： STMicroelectronics (Tours) SAS , Mitsubishi Materials Corporation
- 申请人地址： 16, rue Pierre et Marie Curie 37100 Tours FR
- 专利权人： STMicroelectronics (Tours) SAS,Mitsubishi Materials Corporation
- 当前专利权人： STMicroelectronics (Tours) SAS,Mitsubishi Materials Corporation
- 当前专利权人地址： 16, rue Pierre et Marie Curie 37100 Tours FR
- 代理机构： de Beaumont, Michel
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01G4/33
摘要：
A thin film capacitor is characterized by forming a lower electrode (14), coating a composition onto the lower electrode (14) without applying an annealing process having a temperature of greater than 300°C, drying at a predetermined temperature within a range from ambient temperature to 500°C, and calcining at a predetermined temperature within a range of 500 to 800°C and higher than a drying temperature. The process from coating to calcining performs the process from coating to calcining once or at least twice, or the process from coating to drying is performed at least twice, and then calcining is performed once. The thickness of the dielectric thin film (16) formed after the first calcining is 20 to 600 nm. The ratio of the thickness of the lower electrode (14) and the thickness of the dielectric thin film (16) formed after the initial calcining step (thickness of lower electrode/ thickness of the dielectric thin film) is preferably in the range 0.10 to 15.0.
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