To provide a vacuum processing apparatus that is capable of increasing the quality of a deposited film, increasing the area thereof, and increasing deposition speed. A discharge chamber (2) formed of a ridge waveguide having ridge electrodes that are disposed facing each other and that generate plasma therebetween; a gas supplying portion (10) that is disposed adjacent to the discharge chamber (2) and that supplies source gas, which is used to form the plasma, toward the ridge electrodes; a substrate (S) that is disposed at a position such that the gas supplying portion (10) is flanked by the substrate (S) and the discharge chamber (2) and that is subjected to the processing by the plasma; a low-pressure vessel (7) that accommodates thereinside at least the discharge chamber (2), the gas supplying portion (10), and the substrate (S); and an exhaust portion (9) that is communicated at a position in the low-pressure vessel (7) such that this position and the gas supplying portion (10) are disposed on either side of the discharge chamber (2), and that reduces the pressure inside the low-pressure vessel (7) are provided.