- 专利标题： Plasma processing apparatus and method
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申请号： EP12159427.9申请日： 2005-06-21
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公开(公告)号： EP2479783B1公开(公告)日： 2018-12-12
- 发明人: Koshiishi, Akira , Ooya, Yoshinobu , Iwata, Manabu , Yano, Daisuke , Yamazawa, Yohei , Hanaoka, Hidetoshi , Hayami, Toshihiro , Yamazaki, Hiroki , Sato, Manabu , Sugimoto, Masaru , Hinata, Kunihiko , Kobayashi, Noriyuki , Koshimizu, Chishio , Ohtani, Ryuji , Kibi, Kazuo , Saito, Masashi , Matsumoto, Naoki
- 申请人： Tokyo Electron Limited
- 申请人地址： 3-6, Akasaka 5-chome Minato-ku Tokyo 107-8481 JP
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： 3-6, Akasaka 5-chome Minato-ku Tokyo 107-8481 JP
- 代理机构： Hoffmann Eitle
- 优先权： JP2004183093 20040621; JP2005013912 20050121; JP2005045095 20050222
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01J37/32
摘要：
A plasma etching apparatus includes an upper electrode (34) and a lower electrode (16), between which plasma of a process gas is generated to perform plasma etching on a wafer (W). The apparatus further comprises a variable DC power supply (50) to apply a DC voltage to the upper electrode (34), so as to cause the absolute value of a self-bias voltage V dc on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode (34) side to generate predetermined pressed plasma.
公开/授权文献
- EP2479783A3 Plasma processing apparatus and method 公开/授权日：2014-09-03
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