-
公开(公告)号：EP2479783A3
公开(公告)日：2014-09-03
申请号：EP12159427.9
申请日：2005-06-21
发明人： Koshiishi, Akira , Ooya, Yoshinobu , Iwata, Manabu , Yano, Daisuke , Yamazawa, Yohei , Hanaoka, Hidetoshi , Hayami, Toshihiro , Yamazaki, Hiroki , Sato, Manabu , Sugimoto, Masaru , Hinata, Kunihiko , Kobayashi, Noriyuki , Koshimizu, Chishio , Ohtani, Ryuji , Kibi, Kazuo , Saito, Masashi , Matsumoto, Naoki
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J2237/3342 , H01L21/31138
摘要： A plasma etching apparatus includes an upper electrode (34) and a lower electrode (16), between which plasma of a process gas is generated to perform plasma etching on a wafer (W). The apparatus further comprises a variable DC power supply (50) to apply a DC voltage to the upper electrode (34), so as to cause the absolute value of a self-bias voltage V dc on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode (34) side to generate predetermined pressed plasma.
摘要翻译： 等离子体蚀刻设备包括上电极（34）和下电极（16），在所述上电极和下电极之间产生处理气体的等离子体以在晶片（W）上执行等离子体蚀刻。 该设备还包括一个可变直流电源（50），用于向上电极（34）施加直流电压，以便使其表面上的自偏压电压Vdc的绝对值足够大以获得 在表面上适当的溅射效果，并且增加上电极（34）侧上的等离子体鞘长度以产生预定的压制等离子体。
-
公开(公告)号：EP2479784A2
公开(公告)日：2012-07-25
申请号：EP12159428.7
申请日：2005-06-21
发明人： Koshiishi, Akira , Ooya, Yoshinobu , Iwata, Manabu , Yano, Daisuke , Yamazawa, Yohei , Hanaoka, Hidetoshi , Hayami, Toshihiro , Yamazaki, Hiroki , Sato, Manabu , Sugimoto, Masaru , Hinata, Kunihiko , Kobayashi, Noriyuki , Koshimizu, Chishio , Ohtani, Ryuji , Kibi, Kazuo , Saito, Masashi , Matsumoto, Naoki
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J2237/3342 , H01L21/31138
摘要： A plasma etching apparatus includes an upper electrode (34) and a lower electrode (16), between which plasma of a process gas is generated to perform plasma etching on a wafer (W). The apparatus further comprises a variable DC power supply (50) to apply a DC voltage to the upper electrode (34), so as to cause the absolute value of a self-bias voltage V dc on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode (34) side to generate predetermined pressed plasma.
-
公开(公告)号：EP3200220A1
公开(公告)日：2017-08-02
申请号：EP17160784.9
申请日：2007-10-05
发明人： Koshiishi, Akira , Kobayashi, Noriyuki , Yoneda, Shigeru , Hanawa, Kenichi , Tahara, Shigeru , Sugimoto, Masaru
IPC分类号： H01L21/3065 , H01L21/768 , H05H1/46 , H01J37/32
摘要： There is provided a plasma etching apparatus comprising: a process container (10) configured to be vacuum-exhausted; a first electrode (34) disposed inside the process container; a second electrode (16) disposed opposite to the first electrode and configured to support a target substrate thereon; a first RF power supply unit (46, 48; 48', 89) configured to apply a first RF power for plasma generation to the first electrode or the second electrode; a second RF power supply unit (88, 90) configured to apply a second RF power for ion attraction to the second electrode; a process gas supply unit (66) configured to supply a process gas into the process container; and a controller (95) configured to control the second RF power supply unit, wherein the second RF power supply unit (88, 90) includes a second RF power supply (90) and a second matching unit (88), and the controller (95) is preset to control the second RF power supply unit (88, 90) to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power and a second power set, while controlling the second matching unit (88) to switch a matching operation in synchronism with the power modulation.
摘要翻译： 提供了一种等离子体蚀刻设备，包括：处理容器（10），被配置为被抽真空; 设置在所述处理容器内的第一电极（34） 第二电极（16），所述第二电极（16）与所述第一电极相对设置并且构造为在其上支撑目标基板; 第一RF电源单元（46,48; 48'，89），被配置为向所述第一电极或所述第二电极施加用于产生等离子体的第一RF功率; 第二RF电源单元（88,90），被配置为向所述第二电极施加用于离子吸引的第二RF功率; 处理气体供给单元（66），其构造成将处理气体供给到处理容器中; 和控制器（95），被配置为控制所述第二RF电源单元，其中所述第二RF电源单元（88,90）包括第二RF电源（90）和第二匹配单元（88），并且所述控制器 控制第二匹配单元（88）同时控制第二RF电源单元（88,90）以功率调制模式操作，该功率调制模式在第一功率和第二功率组之间的预定周期中执行功率调制， 以与功率调制同步地切换匹配操作。
-
公开(公告)号：EP2479783A2
公开(公告)日：2012-07-25
申请号：EP12159427.9
申请日：2005-06-21
发明人： Koshiishi, Akira , Ooya, Yoshinobu , Iwata, Manabu , Yano, Daisuke , Yamazawa, Yohei , Hanaoka, Hidetoshi , Hayami, Toshihiro , Yamazaki, Hiroki , Sato, Manabu , Sugimoto, Masaru , Hinata, Kunihiko , Kobayashi, Noriyuki , Koshimizu, Chishio , Ohtani, Ryuji , Kibi, Kazuo , Saito, Masashi , Matsumoto, Naoki
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J2237/3342 , H01L21/31138
摘要： A plasma etching apparatus includes an upper electrode (34) and a lower electrode (16), between which plasma of a process gas is generated to perform plasma etching on a wafer (W). The apparatus further comprises a variable DC power supply (50) to apply a DC voltage to the upper electrode (34), so as to cause the absolute value of a self-bias voltage V dc on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode (34) side to generate predetermined pressed plasma.
-
公开(公告)号：EP3200220B1
公开(公告)日：2019-12-25
申请号：EP17160784.9
申请日：2007-10-05
发明人： Koshiishi, Akira , Kobayashi, Noriyuki , Yoneda, Shigeru , Hanawa, Kenichi , Tahara, Shigeru , Sugimoto, Masaru
IPC分类号： H01L21/3065 , H01L21/768 , H05H1/46 , H01J37/32
-
公开(公告)号：EP2479783B1
公开(公告)日：2018-12-12
申请号：EP12159427.9
申请日：2005-06-21
发明人： Koshiishi, Akira , Ooya, Yoshinobu , Iwata, Manabu , Yano, Daisuke , Yamazawa, Yohei , Hanaoka, Hidetoshi , Hayami, Toshihiro , Yamazaki, Hiroki , Sato, Manabu , Sugimoto, Masaru , Hinata, Kunihiko , Kobayashi, Noriyuki , Koshimizu, Chishio , Ohtani, Ryuji , Kibi, Kazuo , Saito, Masashi , Matsumoto, Naoki
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J2237/3342 , H01L21/31138
摘要： A plasma etching apparatus includes an upper electrode (34) and a lower electrode (16), between which plasma of a process gas is generated to perform plasma etching on a wafer (W). The apparatus further comprises a variable DC power supply (50) to apply a DC voltage to the upper electrode (34), so as to cause the absolute value of a self-bias voltage V dc on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode (34) side to generate predetermined pressed plasma.
-
7.发明公开
公开(公告)号：EP2479782A2
公开(公告)日：2012-07-25
申请号：EP12159425.3
申请日：2005-06-21
发明人： Koshiishi, Akira , Ooya, Yoshinobu , Iwata, Manabu , Yano, Daisuke , Yamazawa, Yohei , Hanaoka, Hidetoshi , Hayami, Toshihiro , Yamazaki, Hiroki , Sato, Manabu , Sugimoto, Masaru , Hinata, Kunihiko , Kobayashi, Noriyuki , Koshimizu, Chishio , Ohtani, Ryuji , Kibi, Kazuo , Saito, Masashi , Matsumoto, Naoki
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J2237/3342 , H01L21/31138
摘要： A plasma etching apparatus includes an upper electrode (34) and a lower electrode (16), between which plasma of a process gas is generated to perform plasma etching on a wafer (W). The apparatus further comprises a variable DC power supply (50) to apply a DC voltage to the upper electrode (34), so as to cause the absolute value of a self-bias voltage V dc on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode (34) side to generate predetermined pressed plasma.
摘要翻译： 等离子体蚀刻装置包括上电极（34）和下电极（16），在其间产生处理气体的等离子体，以对晶片（W）进行等离子体蚀刻。 该装置还包括向上电极施加直流电压的可变直流电源（50），以使得其表面上的自偏压V dc的绝对值足够大以获得 在表面上施加合适的溅射效应，并增加上电极（34）侧的等离子体鞘长度以产生预定的压制等离子体。
-
公开(公告)号：EP3128538A1
公开(公告)日：2017-02-08
申请号：EP16189429.0
申请日：2005-06-21
发明人： Koshiishi, Akira , Sugimoto, Masaru , Hinata, Kunihiko , Kobayashi, Noriyuki , Koshimizu, Chishio , Ohtani, Ryuji , Kibi, Kazuo , Saito, Masashi , Matsumoto, Naoki , Ooya, Yoshinobu , Iwata, Manabu , Yano, Daisuke , Yamazawa, Yohei , Hanaoka, Hidetoshi , Hayami, Toshihiro , Yamazaki, Hiroki , Sato, Manabu
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J2237/3342 , H01L21/31138
摘要： A plasma etching apparatus includes an upper electrode (34) and a lower electrode (16), between which plasma of a process gas is generated to perform plasma etching on a wafer (W). The apparatus further comprises a variable DC power supply (50) to apply a DC voltage to the upper electrode (34), so as to cause the absolute value of a self-bias voltage V dc on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode (34) side to generate predetermined pressed plasma.
摘要翻译： 等离子体蚀刻装置包括上电极（34）和下电极（16），在其间产生处理气体的等离子体，以对晶片（W）进行等离子体蚀刻。 该装置还包括向上电极施加直流电压的可变直流电源（50），以使得其表面上的自偏压V dc的绝对值足够大以获得 在表面上施加合适的溅射效应，并增加上电极（34）侧的等离子体鞘长度以产生预定的压制等离子体。
-
公开(公告)号：EP2479784A3
公开(公告)日：2014-09-03
申请号：EP12159428.7
申请日：2005-06-21
发明人： Koshiishi, Akira , Ooya, Yoshinobu , Iwata, Manabu , Yano, Daisuke , Yamazawa, Yohei , Hanaoka, Hidetoshi , Hayami, Toshihiro , Yamazaki, Hiroki , Sato, Manabu , Sugimoto, Masaru , Hinata, Kunihiko , Kobayashi, Noriyuki , Koshimizu, Chishio , Ohtani, Ryuji , Kibi, Kazuo , Saito, Masashi , Matsumoto, Naoki
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J2237/3342 , H01L21/31138
摘要： A plasma etching apparatus includes an upper electrode (34) and a lower electrode (16), between which plasma of a process gas is generated to perform plasma etching on a wafer (W). The apparatus further comprises a variable DC power supply (50) to apply a DC voltage to the upper electrode (34), so as to cause the absolute value of a self-bias voltage V dc on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode (34) side to generate predetermined pressed plasma.
-
公开(公告)号：EP2479782A3
公开(公告)日：2014-08-27
申请号：EP12159425.3
申请日：2005-06-21
发明人： Koshiishi, Akira , Ooya, Yoshinobu , Iwata, Manabu , Yano, Daisuke , Yamazawa, Yohei , Hanaoka, Hidetoshi , Hayami, Toshihiro , Yamazaki, Hiroki , Sato, Manabu , Sugimoto, Masaru , Hinata, Kunihiko , Kobayashi, Noriyuki , Koshimizu, Chishio , Ohtani, Ryuji , Kibi, Kazuo , Saito, Masashi , Matsumoto, Naoki
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J2237/3342 , H01L21/31138
摘要： A plasma etching apparatus includes an upper electrode (34) and a lower electrode (16), between which plasma of a process gas is generated to perform plasma etching on a wafer (W). The apparatus further comprises a variable DC power supply (50) to apply a DC voltage to the upper electrode (34), so as to cause the absolute value of a self-bias voltage V dc on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode (34) side to generate predetermined pressed plasma.
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.023 秒)
