发明公开
EP2611950A1 PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV) WITH HEATED SUBSTRATE AND COOLED ELECTROLYTE
有权
对铜化合物CHIP芯片，晶圆芯片的电气隔离和在TSV的晶片到晶片（通过硅通孔）中的方法加热的衬底和冰鲜电解质。
- 专利标题： PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV) WITH HEATED SUBSTRATE AND COOLED ELECTROLYTE
- 专利标题（中）： 对铜化合物CHIP芯片，晶圆芯片的电气隔离和在TSV的晶片到晶片（通过硅通孔）中的方法加热的衬底和冰鲜电解质。
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申请号： EP11760829.9申请日： 2011-07-08
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公开(公告)号： EP2611950A1公开(公告)日： 2013-07-10
- 发明人: PREISSER, Robert, F.
- 申请人： Atotech Deutschland GmbH
- 申请人地址： Erasmusstrasse 20 10553 Berlin DE
- 专利权人： Atotech Deutschland GmbH
- 当前专利权人： Atotech Deutschland GmbH
- 当前专利权人地址： Erasmusstrasse 20 10553 Berlin DE
- 代理机构： Wonnemann, Jörg
- 优先权： US845801 20100729
- 国际公布： WO2012014029 20120202
- 主分类号： C25D3/38
- IPC分类号： C25D3/38 ; C25D5/00 ; C25D7/12 ; C25D21/02 ; H01L21/288 ; H01L21/768
摘要：
Process of electrodepositing a metal in a high aspect ratio via in a silicon substrate to form a through-silicon-via (TSV), utilizing an electrolytic bath including a redox mediator, in an electrolytic metal plating system including a chuck adapted to hold the silicon substrate and to heat the silicon substrate to a first temperature, a temperature control device to maintain temperature of the electrolytic bath at a second temperature, in which the first temperature is maintained in a range from about 30° C. to about 60° C. and the second temperature is maintained at a temperature (a) at least 5° C. lower than the first temperature and (b) in a range from about 15° C. to about 35° C.
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