发明公开
- 专利标题： SEMICONDUCTOR CHIP WITH REINFORCING THROUGH-SILICON-VIAS
- 专利标题（中）： 硅增强经文半导体芯片
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申请号： EP11769967.8申请日： 2011-09-21
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公开(公告)号： EP2619794A1公开(公告)日： 2013-07-31
- 发明人: SU, Michael, Z. , REFAI-AHMED, Gamal , BLACK, Bryan
- 申请人： Advanced Micro Devices, Inc. , ATI Technologies ULC
- 申请人地址： One Amd Place Sunnyvale, CA 94088-3453 US
- 专利权人： Advanced Micro Devices, Inc.,ATI Technologies ULC
- 当前专利权人： Advanced Micro Devices, Inc.,ATI Technologies ULC
- 当前专利权人地址： One Amd Place Sunnyvale, CA 94088-3453 US
- 代理机构： Brookes Batchellor LLP
- 优先权： US889615 20100924
- 国际公布： WO2012040274 20120329
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L23/60 ; H01L25/065 ; H01L23/00
摘要：
A method of manufacturing includes connecting a first end of a first through-silicon-via to a first die seal proximate a first side of a first semiconductor chip. A second end of the first thu-silicon-via is connected to a second die seal proximate a second side of the first semiconductor chip opposite the first side.
公开/授权文献
- EP2619794B1 SEMICONDUCTOR CHIP WITH REINFORCING THROUGH-SILICON-VIAS 公开/授权日：2016-03-16
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