公开(公告)号：EP2614523B1

公开(公告)日：2020-11-25

申请号：EP11758061.3

申请日：2011-09-09

申请人： Advanced Micro Devices, Inc. ,  ATI Technologies ULC

发明人： BLACK, Bryan ,  SU, Michael, Z. ,  REFAI-AHMED, Gamal ,  SIEGEL, Joe ,  PREJEAN, Seth

IPC分类号： H01L23/48 ,  H01L25/065

公开(公告)号：EP2619794A1

公开(公告)日：2013-07-31

申请号：EP11769967.8

申请日：2011-09-21

申请人： Advanced Micro Devices, Inc. ,  ATI Technologies ULC

发明人： SU, Michael, Z. ,  REFAI-AHMED, Gamal ,  BLACK, Bryan

IPC分类号： H01L23/58 ,  H01L23/60 ,  H01L25/065 ,  H01L23/00

CPC分类号： H01L23/585 ,  H01L21/76898 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/60 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/351 ,  H01L2224/81 ,  H01L2924/00

摘要： A method of manufacturing includes connecting a first end of a first through-silicon-via to a first die seal proximate a first side of a first semiconductor chip. A second end of the first thu-silicon-via is connected to a second die seal proximate a second side of the first semiconductor chip opposite the first side.

公开(公告)号：EP2614523A1

公开(公告)日：2013-07-17

申请号：EP11758061.3

申请日：2011-09-09

申请人： Advanced Micro Devices, Inc. ,  ATI Technologies ULC

发明人： BLACK, Bryan ,  SU, Michael, Z. ,  REFAI-AHMED, Gamal ,  SIEGEL, Joe ,  PREJEAN, Seth

IPC分类号： H01L23/48 ,  H01L25/065

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0233 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05095 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05169 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/17181 ,  H01L2225/06548 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

公开(公告)号：EP2614522B1

公开(公告)日：2018-08-01

申请号：EP11758336.9

申请日：2011-09-09

申请人： Advanced Micro Devices, Inc. ,  ATI Technologies ULC

发明人： SU, Michael, Z. ,  REFAI-AHMED, Gamal ,  BLACK, Bryan

IPC分类号： H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L25/065 ,  H01L23/14 ,  H01L23/24 ,  H01L23/367 ,  H01L23/495 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L23/24 ,  H01L21/563 ,  H01L23/147 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3675 ,  H01L23/49575 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49833 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83051 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/16251 ,  H01L2924/166 ,  H01L2924/167 ,  H01L2924/00

摘要： A method of manufacturing is provided that includes providing a semiconductor chip with an insulating layer. The insulating layer includes a trench. A second semiconductor chip is stacked on the first semiconductor chip to leave a gap. A polymeric filler is placed in the gap wherein a portion of the polymeric filler is drawn into the trench.

公开(公告)号：EP2619794B1

公开(公告)日：2016-03-16

申请号：EP11769967.8

申请日：2011-09-21

申请人： Advanced Micro Devices, Inc. ,  ATI Technologies ULC

发明人： SU, Michael, Z. ,  REFAI-AHMED, Gamal ,  BLACK, Bryan

IPC分类号： H01L21/768 ,  H01L23/60 ,  H01L25/065 ,  H01L23/58 ,  H01L23/31 ,  H01L23/48 ,  H01L23/498 ,  H01L21/60

CPC分类号： H01L23/585 ,  H01L21/76898 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/60 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/351 ,  H01L2224/81 ,  H01L2924/00

公开(公告)号：EP2614522A1

公开(公告)日：2013-07-17

申请号：EP11758336.9

申请日：2011-09-09

申请人： Advanced Micro Devices, Inc. ,  ATI Technologies ULC

发明人： SU, Michael, Z. ,  REFAI-AHMED, Gamal ,  BLACK, Bryan

IPC分类号： H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L25/065

CPC分类号： H01L23/24 ,  H01L21/563 ,  H01L23/147 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3675 ,  H01L23/49575 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49833 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83051 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/16251 ,  H01L2924/166 ,  H01L2924/167 ,  H01L2924/00

摘要： A method of manufacturing is provided that includes providing a semiconductor chip with an insulating layer. The insulating layer includes a trench. A second semiconductor chip is stacked on the first semiconductor chip to leave a gap. A polymeric filler is placed in the gap wherein a portion of the polymeric filler is drawn into the trench.

公开(公告)号：EP2619795A1

公开(公告)日：2013-07-31

申请号：EP11764639.8

申请日：2011-09-21

申请人： ATI Technologies ULC ,  Advanced Micro Devices, Inc.

发明人： REFAI-AHMED, Gamal ,  BLACK, Bryan ,  SU, Michael, Z.

IPC分类号： H01L25/065 ,  H01L23/36

CPC分类号： H01L25/0657 ,  H01L23/13 ,  H01L23/42 ,  H01L23/49816 ,  H01L23/49827 ,  H01L25/0652 ,  H01L2023/4062 ,  H01L2224/1403 ,  H01L2224/141 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/81192 ,  H01L2224/83192 ,  H01L2224/92225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2924/01322 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/15321 ,  H05K1/0204 ,  H05K1/141 ,  H05K1/181 ,  H05K2201/09072 ,  H05K2201/10378 ,  H05K2201/10416 ,  H05K2201/10515 ,  H05K2201/1056

摘要： A method of manufacturing is provided that includes placing a thermal management device in thermal contact with a first semiconductor chip of a semiconductor chip device. The semiconductor chip device includes a first substrate coupled to the first semiconductor chip. The first substrate has a first aperture. At least one of the first semiconductor chip and the thermal management device is at least partially positioned in the first aperture.

公开(公告)号：EP2614521B1

公开(公告)日：2018-01-24

申请号：EP11757730.4

申请日：2011-09-09

申请人： Advanced Micro Devices, Inc. ,  ATI Technologies ULC

发明人： SU, Michael, Z. ,  FU, Lei ,  REFAI-AHMED, Gamal ,  BLACK, Bryan

IPC分类号： H01L21/56 ,  H01L25/065

CPC分类号： H01L21/563 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/16146 ,  H01L2224/16235 ,  H01L2224/17181 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/15159 ,  H01L2924/15311 ,  H01L2224/16225 ,  H01L2924/00 ,  H01L2224/81

摘要： A method of manufacturing is provided that includes placing a removable cover on a surface of a substrate. The substrate includes a first semiconductor chip positioned on the surface. The first semiconductor chip includes a first sidewall. The removable cover includes a second sidewall positioned opposite the first sidewall. A first underfill is placed between the first semiconductor chip and the surface wherein the second sidewall provides a barrier to flow of the first underfill. Various apparatus are also disclosed.

公开(公告)号：EP2614521A1

公开(公告)日：2013-07-17

申请号：EP11757730.4

申请日：2011-09-09

申请人： Advanced Micro Devices, Inc. ,  ATI Technologies ULC

发明人： SU, Michael, Z. ,  FU, Lei ,  REFAI-AHMED, Gamal ,  BLACK, Bryan

IPC分类号： H01L21/56

CPC分类号： H01L21/563 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/16146 ,  H01L2224/16235 ,  H01L2224/17181 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/15159 ,  H01L2924/15311 ,  H01L2224/16225 ,  H01L2924/00 ,  H01L2224/81

摘要： A method of manufacturing is provided that includes placing a removable cover on a surface of a substrate. The substrate includes a first semiconductor chip positioned on the surface. The first semiconductor chip includes a first sidewall. The removable cover includes a second sidewall positioned opposite the first sidewall. A first underfill is placed between the first semiconductor chip and the surface wherein the second sidewall provides a barrier to flow of the first underfill. Various apparatus are also disclosed.

摘要翻译： 提供了一种制造方法，其包括将可移除的盖放置在基板的表面上。 衬底包括位于表面上的第一半导体芯片。 第一半导体芯片包括第一侧壁。 可移除的盖包括与第一侧壁相对设置的第二侧壁。 第一底部填充物放置在第一半导体芯片和表面之间，其中第二侧壁为第一底部填充物的流动提供阻挡。 还公开了各种装置。

公开(公告)号：EP2324408A1

公开(公告)日：2011-05-25

申请号：EP09789013.1

申请日：2009-07-27

申请人： Advanced Micro Devices, Inc. ,  ATI Technologies ULC

发明人： AHMAD, Sagheer ,  REFAI-AHMED, Gamal

IPC分类号： G06F1/32 ,  G06F1/20

CPC分类号： G06F1/206 ,  G06F1/3203 ,  Y02D10/16

摘要： Provided are systems, methods, and computer program products for regulating power consumption in application-specific integrated circuits (ASICs)-such as, for example, a graphics processing unit. In such a method, a value of a leakage current of an ASIC is received from computer-readable information contained in the ASIC. One or more operational parameters of the ASIC-such as, for example, a supply voltage to the ASIC, a engine speed of the ASIC, and/or a fan speed of a fan used to cool the ASIC-are adjusted based on the value of the leakage current of the ASIC. Optionally, the one or more operational parameters may also be adjusted based on a type of application running on the ASIC. In addition, a supply voltage to the ASIC may (optionally) be shut off if the temperature of the ASIC exceeds a threshold.

摘要翻译： 提供了用于调整专用集成电路（ASIC）中的功率消耗的系统，方法和计算机程序产品，例如图形处理单元。 在这种方法中，从ASIC中包含的计算机可读信息接收ASIC的漏电流值。 基于该值来调整ASIC的一个或多个操作参数，例如ASIC的供电电压，ASIC的引擎速度和/或用于冷却ASIC的风扇的风扇速度 的ASIC漏电流。 可选地，还可以基于在ASIC上运行的应用的类型来调整一个或多个操作参数。 此外，如果ASIC的温度超过阈值，则可以（可选地）关闭ASIC的电源电压。