Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Patent Title (中): 半导体器件及其制造方法
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Application No.: EP10858627.2Application Date: 2010-10-20
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Publication No.: EP2631950A1Publication Date: 2013-08-28
- Inventor: OKAMOTO, Naoya , MINOURA, Yuichi
- Applicant: Fujitsu Limited
- Applicant Address: 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi, Kanagawa 211-8588 JP
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi, Kanagawa 211-8588 JP
- Agency: Holz, Ulrike
- International Announcement: WO2012053071 20120426
- Main IPC: H01L29/47
- IPC: H01L29/47 ; H01L21/338 ; H01L21/8232 ; H01L27/06 ; H01L29/778 ; H01L29/812 ; H01L29/872
Abstract:
A semiconductor device is provided with: a GaN layer (2); an anode electrode (4) that forms a Schottky junction with a Ga face of the GaN layer (2); and an InGaN layer (3) positioned between at least a part of the anode electrode (4) and the GaN layer (2).
Information query
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