公开(公告)号：EP2518771A1

公开(公告)日：2012-10-31

申请号：EP09852524.9

申请日：2009-12-21

Applicant: Fujitsu Limited

Inventor： MINOURA, Yuichi ,  KIKKAWA, Toshihide

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/12

CPC classification number: H01L29/7802 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/66712

Abstract: A compound semiconductor device is provided with a first nitride semiconductor layer (1) of a first conductivity type, a second nitride semiconductor layer (5) of the first conductivity type which is formed over the first nitride semiconductor layer (1) and being in contact with the first nitride semiconductor layer (1), a third nitride semiconductor layer (4) of a second conductivity type being in contact with the second nitride semiconductor layer (5), a fourth nitride semiconductor layer (3) of the first conductivity type being in contact with the third nitride semiconductor layer (4), and an insulating film (2) insulating the first nitride semiconductor layer (1) and the fourth nitride semiconductor layer (3) from each other. A source electrode (8) is positioned inside an outer edge of the insulating film (2) in planar view.

Abstract translation: 化合物半导体器件设置有第一导电类型的第一氮化物半导体层（1），形成在第一氮化物半导体层（1）上并且接触的第一导电类型的第二氮化物半导体层（5） 与第一氮化物半导体层（1）接触的第二导电类型的第三氮化物半导体层（4）与第二氮化物半导体层（5）接触，第一导电类型的第四氮化物半导体层（3） 与第三氮化物半导体层（4）接触的绝缘膜（2）和将第一氮化物半导体层（1）和第四氮化物半导体层（3）彼此绝缘的绝缘膜（2）。 在平面图中，源电极（8）位于绝缘膜（2）的外边缘的内侧。

公开(公告)号：EP2518771B1

公开(公告)日：2017-08-23

申请号：EP09852524.9

申请日：2009-12-21

Applicant: Fujitsu Limited

Inventor： MINOURA, Yuichi ,  KIKKAWA, Toshihide

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/12

CPC classification number: H01L29/7802 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/66712

Abstract: A compound semiconductor device is provided with a first nitride semiconductor layer (1) of a first conductivity type, a second nitride semiconductor layer (5) of the first conductivity type which is formed over the first nitride semiconductor layer (1) and being in contact with the first nitride semiconductor layer (1), a third nitride semiconductor layer (4) of a second conductivity type being in contact with the second nitride semiconductor layer (5), a fourth nitride semiconductor layer (3) of the first conductivity type being in contact with the third nitride semiconductor layer (4), and an insulating film (2) insulating the first nitride semiconductor layer (1) and the fourth nitride semiconductor layer (3) from each other. A source electrode (8) is positioned inside an outer edge of the insulating film (2) in planar view.

Abstract translation: 化合物半导体器件设置有第一导电类型的第一氮化物半导体层（1），形成在第一氮化物半导体层（1）上方且与第一导电类型的第一导电类型的第二导电类型的第二氮化物半导体层（5）接触 与第一氮化物半导体层（1），第二导电类型的第三氮化物半导体层（4）与第二氮化物半导体层（5）接触，第一导电类型的第四氮化物半导体层（3） 与第三氮化物半导体层（4）接触;以及将第一氮化物半导体层（1）和第四氮化物半导体层（3）彼此绝缘的绝缘膜（2）。 源电极（8）在俯视时位于绝缘膜（2）的外缘的内侧。

公开(公告)号：EP2631950A1

公开(公告)日：2013-08-28

申请号：EP10858627.2

申请日：2010-10-20

Applicant: Fujitsu Limited

Inventor： OKAMOTO, Naoya ,  MINOURA, Yuichi

IPC: H01L29/47 ,  H01L21/338 ,  H01L21/8232 ,  H01L27/06 ,  H01L29/778 ,  H01L29/812 ,  H01L29/872

CPC classification number: H01L29/2003 ,  H01L21/0254 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/0615 ,  H01L29/205 ,  H01L29/475 ,  H01L29/66212 ,  H01L29/7787 ,  H01L29/872 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/00

Abstract: A semiconductor device is provided with: a GaN layer (2); an anode electrode (4) that forms a Schottky junction with a Ga face of the GaN layer (2); and an InGaN layer (3) positioned between at least a part of the anode electrode (4) and the GaN layer (2).

Abstract translation: 一种半导体器件设置有：GaN层（2）; 与所述GaN层（2）的Ga面形成肖特基结的阳极电极（4）; 以及位于阳极电极（4）的至少一部分与GaN层（2）之间的InGaN层（3）。