发明公开
EP2647035A4 HIGH RATE ELECTRIC FIELD DRIVEN NANOELEMENT ASSEMBLY ON AN INSULATED SURFACE
审中-公开
的电高频电场来驱动纳米元件安排在一个偏僻的表面
- 专利标题: HIGH RATE ELECTRIC FIELD DRIVEN NANOELEMENT ASSEMBLY ON AN INSULATED SURFACE
- 专利标题(中): 的电高频电场来驱动纳米元件安排在一个偏僻的表面
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申请号: EP11845971申请日: 2011-11-29
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公开(公告)号: EP2647035A4公开(公告)日: 2015-04-08
- 发明人: SIRMAN ASLI , BUSNAINA AHMED , YILMAZ CIHAN , HUANG JUN , SOMU SIVASUBRAMANIAN
- 申请人: UNIV NORTHEASTERN
- 专利权人: UNIV NORTHEASTERN
- 当前专利权人: UNIV NORTHEASTERN
- 优先权: US41765810 2010-11-29
- 主分类号: H01L21/20
- IPC分类号: H01L21/20 ; B82Y40/00 ; C25D13/00 ; H01L21/02
摘要:
A method for high rate assembly of nanoelements into two-dimensional void patterns on a non-conductive substrate surface utilizes an applied electric field to stabilize against forces resulting from pulling the substrate through the surface of a nanoelement suspension. The electric field contours emanating from a conductive layer in the substrate, covered by an insulating layer, are modified by a patterned photoresist layer, resulting in an increased driving force for nanoelements to migrate from a liquid suspension to voids on a patterned substrate having a non-conductive surface. The method can be used for the production of microscale and nanoscale circuits, sensors, and other electronic devices.
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