发明公开
EP2665104A1 Magnetoresistive elements and memory devices including the same
有权
磁阻式Speicherelemente und Speichervorrichtungen damit
- 专利标题： Magnetoresistive elements and memory devices including the same
- 专利标题（中）： 磁阻式Speicherelemente und Speichervorrichtungen damit
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申请号： EP13154646.7申请日： 2013-02-08
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公开(公告)号： EP2665104A1公开(公告)日： 2013-11-20
- 发明人: Lee, Sung-chul , Pi, Ung-hwan , Kim, Kwang-seok , Kim, Kee-won , Jang, Young-man
- 申请人： Samsung Electronics Co., Ltd
- 申请人地址： 129, Samsung-ro Yeongtong-gu Suwon-si Gyeonggi-do 443-742 KR
- 专利权人： Samsung Electronics Co., Ltd
- 当前专利权人： Samsung Electronics Co., Ltd
- 当前专利权人地址： 129, Samsung-ro Yeongtong-gu Suwon-si Gyeonggi-do 443-742 KR
- 代理机构： Greene, Simon Kenneth
- 优先权： KR20120053157 20120518
- 主分类号： H01L43/08
- IPC分类号： H01L43/08 ; G11C11/16
摘要：
Magnetoresistive elements, and memory devices including the same, include a pinned layer having a fixed magnetization direction, a free layer corresponding to the pinned layer, and a protruding element protruding from the free layer and having a changeable magnetization direction. The free layer has a changeable magnetization direction. The protruding element is shaped in the form of a tube. The protruding element includes a first protruding portion and a second protruding portion protruding from ends of the free layer facing in different directions.
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