Provided are a piezoelectric device that allows for an improvement in the power durability of an electrode formed on a piezoelectric thin film and a significant reduction in etchant concentration or etching time and a method for manufacturing such a piezoelectric device. Among a +C plane (22) on the +Z axis side of a piezoelectric thin film (20) and a -C plane (12) on the -Z axis side of the piezoelectric thin film (20), the -C plane (12) on the -Z axis side of the piezoelectric thin film (20) is etched. Thus, -Z planes (21) of the piezoelectric thin film (20) on which epitaxial growth is possible are exposed. Ti is epitaxially grown on the -Z planes (21) of the piezoelectric thin film (20) in the -Z axis direction such that the crystal growth plane thereof is parallel to the -Z planes (21) of the piezoelectric thin film (20). Al is then epitaxially grown on the surface of the Ti electrode (65) in the -Z axis direction such that the crystal growth plane thereof is parallel to the -Z planes (21) of the piezoelectric thin film (20).