公开(公告)号：EP2690782A4

公开(公告)日：2014-08-20

申请号：EP12759963

申请日：2012-03-21

申请人： MURATA MANUFACTURING CO

发明人： ITO KOREKIYO ,  IWAMOTO TAKASHI

IPC分类号： H03H3/08 ,  H01L41/187 ,  H01L41/33 ,  H03H9/02 ,  H03H9/145

CPC分类号： H01L41/29 ,  H01L41/04 ,  H01L41/0477 ,  H01L41/1873 ,  H01L41/297 ,  H01L41/313 ,  H01L2224/11 ,  H03H3/08 ,  H03H9/02574 ,  H03H9/02929 ,  H03H9/14538

摘要： Provided are a piezoelectric device that allows for an improvement in the power durability of an electrode formed on a piezoelectric thin film and a significant reduction in etchant concentration or etching time and a method for manufacturing such a piezoelectric device. Among a +C plane (22) on the +Z axis side of a piezoelectric thin film (20) and a -C plane (12) on the -Z axis side of the piezoelectric thin film (20), the -C plane (12) on the -Z axis side of the piezoelectric thin film (20) is etched. Thus, -Z planes (21) of the piezoelectric thin film (20) on which epitaxial growth is possible are exposed. Ti is epitaxially grown on the -Z planes (21) of the piezoelectric thin film (20) in the -Z axis direction such that the crystal growth plane thereof is parallel to the -Z planes (21) of the piezoelectric thin film (20). Al is then epitaxially grown on the surface of the Ti electrode (65) in the -Z axis direction such that the crystal growth plane thereof is parallel to the -Z planes (21) of the piezoelectric thin film (20).

摘要翻译： 本发明提供一种压电装置做允许对在形成于压电薄膜和在蚀刻剂浓度，蚀刻时间显著减少和用于制造压电装置搜索的方法的电极的功率耐久性的改善。 中的+ C面（22）上的压电薄膜（20）和在所述压电薄膜（20）的Z轴侧的-c面（12）的+ Z轴侧，C面（ 12）上的压电薄膜的-Z轴侧（20）被蚀刻。 因此，压电薄膜（20），其上的外延生长是可能的Z平面（21）被暴露。 Ti的外延生长在所述压电薄膜的-Z面（21）（20）在所测试的Z轴方向的平面内做其晶体生长是平行于压电薄膜的Z平面（21）（20 ）。 的Al，然后外延生长在所测试的Z轴方向的钛电极（65）的表面上做了其晶体生长面是平行于压电薄膜（20）的Z平面（21）。

公开(公告)号：EP2624451A4

公开(公告)日：2015-03-11

申请号：EP11829169

申请日：2011-09-28

申请人： MURATA MANUFACTURING CO

发明人： ITO KOREKIYO

IPC分类号： H03H9/25 ,  H01L41/08 ,  H01L41/22 ,  H01L41/312 ,  H01L41/316 ,  H01L41/332 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02 ,  H03H9/05 ,  H03H9/17

CPC分类号： H01L41/253 ,  H01L21/02694 ,  H01L41/0536 ,  H01L41/081 ,  H01L41/0815 ,  H01L41/0838 ,  H01L41/18 ,  H01L41/27 ,  H01L41/277 ,  H01L41/297 ,  H01L41/312 ,  H01L41/332 ,  H01L41/47 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02574 ,  H03H9/059 ,  H03H9/173

摘要： Disclosed is a piezoelectric device free of some problems associated with ion implantation: the degradation of the surface roughness of the piezoelectric thin film and the cracking of the supporting substrate. Also disclosed is a method for manufacturing this piezoelectric device. During an isolation formation step a supporting substrate (50) has a piezoelectric thin film (10) formed on its front (14) with a compressive stress film (90) present on its back (15). The compressive stress film (90) compresses the surface (14 on the piezoelectric single crystal substrate (1) side of the supporting substrate (50), and the piezoelectric thin film (10) compresses the back (15) of the supporting substrate (50), which is opposite to the surface (14) on the piezoelectric single crystal substrate (1) side. In other words, the compressive stress produced by the compressive stress film (90) and that by the piezoelectric thin film (10) are in balance in the supporting substrate (50). This makes the supporting substrate (50) free of warpage and able to remain flat. To this end, the driving force that induces isolation in the isolation formation step is gasification of the implanted ionized element rather than the compressive stress to the isolation plane produced by the piezoelectric thin film (10).

摘要翻译： 公开的是自由的与离子注入相关的一些问题的压电装置，上述压电薄膜的表面粗糙度和支撑基板的裂纹的恶化。 所以圆盘游离缺失是用于制造该压电器件的方法。 在形成过程中的分离步骤与压缩应力膜（90）上存在的它的后面（15）的支撑基板（50）具有形成在其前表面（14）的压电薄膜（10）。 压缩应力电影（90）压缩所述表面（14在压电单晶衬底（1）的支撑基板（50）的侧上，并且压电薄膜（10）压缩所述支撑基板的背面（15）（50 ），所有这些是相对在压电单晶衬底（1）侧。换句话说，由压缩应力成膜所产生的压缩应力（90）的表面（14）和由所述压电薄膜（10所做的那样）是在 在支撑基板（50）的平衡。这使得在支撑基板（50）自由弯曲的和能够保持平坦的。为此，驱动力确实诱导隔离在隔离形成步骤是注入离子化元件的气化，而不是 压缩应力由压电薄膜（10）中产生的绝缘平面。

公开(公告)号：EP2506431A4

公开(公告)日：2014-02-26

申请号：EP10833163

申请日：2010-11-22

申请人： MURATA MANUFACTURING CO

发明人： ITO KOREKIYO

IPC分类号： H03H3/02 ,  H01L41/313 ,  H03H3/08 ,  H03H9/02

CPC分类号： H01L41/053 ,  H01L41/18 ,  H01L41/313 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02007 ,  H03H9/02574 ,  H03H9/05 ,  H03H2003/021 ,  Y10T29/42 ,  Y10T29/49126 ,  Y10T156/1153

摘要： A piezoelectric device having resonance characteristics which are not degraded even if an interlayer for bonding is provided between a piezoelectric thin film and a support member and a method for manufacturing the piezoelectric device are provided. After an ion implanted portion is formed in a piezoelectric single crystal substrate (1) by implantation of hydrogen ions, an interlayer (32) of a metal is formed on a rear surface (12) the piezoelectric single crystal substrate (1). In addition, a support member (30) is bonded to the piezoelectric single crystal substrate (1) with this interlayer (32) interposed therebetween. A composite piezoelectric body (2) in which the ion implanted portion is formed or a composite piezoelectric substrate (3) obtained by heat separation of the piezoelectric single crystal substrate (1) is heated at 450°C to 700°C to oxidize the metal of the interlayer, so that the conductivity thereof is decreased. Accordingly, since the interlayer of a metal is formed, the piezoelectric substrate and the support member can be reliably adhered to each other, and since the metal of the interlayer is oxidized, the conductivity of the interlayer can be decreased, so that a piezoelectric device having excellent resonance characteristics can be provided.