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    SURFACE ACOUSTIC WAVE (SAW) STRUCTURES WITH TRANSVERSE MODE SUPPRESSION
    3.
    发明公开
    SURFACE ACOUSTIC WAVE (SAW) STRUCTURES WITH TRANSVERSE MODE SUPPRESSION 审中-公开

    公开(公告)号：EP4175170A1

    公开(公告)日：2023-05-03

    申请号：EP22202612.2

    申请日：2022-10-19

    Applicant: Qorvo US, Inc.

    Inventor： YOKOYAMA, Tsuyoshi ,  TANAKA, Tabito ,  CHUN, Jun Sung

    IPC: H03H9/02 ,  H03H9/145

    Abstract: Surface acoustic wave, SAW, structures with transverse mode suppression are disclosed. In one aspect, the SAW structure provides digits or fingers (306(1)-306(N), 314(1)-314(N)) with broad interior terminal end shapes (312(1), 312(X), 318(1), 318(X)). By providing such shapes spurious modes above the resonance frequency of the SAW are suppressed thereby providing desired out of band rejection that helps satisfy design criteria such as keeping a higher Q value, a higher K2 value and better Temperature Coefficient of Frequency, TCF.

    METHOD FOR MANUFACTURING SENSOR DEVICE AND SENSOR DEVICE
    4.
    发明公开
    METHOD FOR MANUFACTURING SENSOR DEVICE AND SENSOR DEVICE 审中-公开

    公开(公告)号：EP3961922A1

    公开(公告)日：2022-03-02

    申请号：EP20795475.1

    申请日：2020-04-22

    Applicant: Kyocera Corporation

    Inventor： NAKAMURA, Shinnosuke ,  FUKUURA, Atsuomi ,  KATTA, Hiroshi

    IPC: H03H3/08 ,  G01N29/02 ,  H03H9/145 ,  H03H9/42

    Abstract: A sensor device includes a substrate having a substrate surface, a first IDT electrode positioned on the substrate surface, a second IDT electrode positioned on the substrate surface, a waveguide, and a protective film. The waveguide is positioned on the substrate surface and between the first IDT electrode and the second IDT electrode. The waveguide includes a first immobilized layer positioned on the substrate surface and a second immobilized layer positioned on the first immobilized layer. The second immobilized layer is positioned inside an outer edge of the first immobilized layer as seen in a plan view.

    TRANSDUCER STRUCTURE FOR AN ACOUSTIC WAVE DEVICE
    6.
    发明公开
    TRANSDUCER STRUCTURE FOR AN ACOUSTIC WAVE DEVICE 审中-公开

    公开(公告)号：EP3796555A1

    公开(公告)日：2021-03-24

    申请号：EP19306123.1

    申请日：2019-09-18

    Applicant: FREC|N|SYS

    Inventor： BALLANDRAS, Sylvain ,  COURJON, Emilie ,  BERNARD, Florent

    IPC: H03H9/02 ,  H03H9/145 ,  H03H9/64

    Abstract: A transducer structure (100) for an acoustic device comprising a piezoelectric layer (104), a pair of inter-digitated comb electrodes (108, 110), comprising a plurality of electrode means (112_1, 112_2, 112_3, 112_4, 114_1, 114_2, 114_3, 114_4) with a pitch p satisfying the Bragg condition given by p= lambda/2, lambda being the operating acoustic wavelength of said transducer, characterized in that the inter-digitated comb electrodes (108, 110) are embedded in the piezoelectric layer (104) and the acoustic impedance of the electrode means is less than the acoustic impedance of the piezoelectric layer such that, in use, the excitation of a wave propagating mode in the volume of the electrode means is taking place and is the predominant propagating mode of the structure. The invention relates also to a acoustic wave device comprising at least one transducer structure as described above and to a method for fabricating said transducer structure. The invention relates also to the use of the frequency of the bulk wave propagating in the electrode means of said transducer structure in an acoustic wave device to generate contribution at high frequency, in particular above 3GHz.

    SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND ELECTRONIC DEVICE
    9.
    发明授权
    SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND ELECTRONIC DEVICE 有权

    公开(公告)号：EP2403141B1

    公开(公告)日：2018-10-24

    申请号：EP10746022.2

    申请日：2010-02-26

    Applicant: Seiko Epson Corporation

    Inventor： YAMANAKA, Kunihito

    IPC: H03H9/145 ,  H03H9/25 ,  H03H9/02 ,  H03B5/30

    CPC classification number: H03H9/25 ,  H03B5/326 ,  H03H9/02551 ,  H03H9/0296 ,  H03H9/02992 ,  H03H9/14538 ,  H03H9/14594

    Abstract: [Problem] To provide a surface acoustic wave resonator which can realize good frequency-temperature characteristics. [Means for Resolution] An SAW resonator for solving the heretofore described problem is a SAW resonator 10 which, using a quartz substrate 30 with Euler angles (-1.5° ‰¤ Æ ‰¤ 1.5°, 117° ‰¤ ¸ ‰¤ 142°, and 42.79° ‰¤ |È| ‰¤ 49.57°), includes an IDT 12 which excites a stop band upper end mode SAW, and grooves 32 hollowed out of the substrate positioned between electrode fingers 18 configuring the IDT 12, wherein, when the wavelength of the SAW is » and the depth of the inter-electrode finger grooves 32 is G, » and G satisfy the relationship of 0.01 �¢ » ‰¦ G and wherein, when the line occupation rate of the IDT 12 is ·, the groove 32 depth G and line occupation rate · satisfy the relationships of - 2.0000 × G / » + 0.7200 ‰¦ · ‰¦ - 2.5000 × G / » + 0.7775 provided that 0.0100 �¢ » ‰¦ G ‰¦ 0.0500 �¢ » - 3.5898 × G / » + 0.7995 ‰¦ · ‰¦ - 2.5000 × G / » + 0.7775 provided that 0.0500 �¢ »

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